Novel field-effect passivation for nanostructured Si solar cells using interfacial sulfur incorporation
- Title
- Novel field-effect passivation for nanostructured Si solar cells using interfacial sulfur incorporation
- Author
- 박태주
- Keywords
- nanostructured Si solar cells; field-effect passivation; sulfur passivation; Al2O3; atomic layer deposition
- Issue Date
- 2017-04
- Publisher
- WILEY-BLACKWELL
- Citation
- PROGRESS IN PHOTOVOLTAICS, v. 25, No. 5, Page. 376-383
- Abstract
- Surface passivation of a nanostructured Si solar cells plays a crucial role in collecting photogenerated carriers by mitigating carrier recombination at surface defect sites. Interface modification by additional sulfur (S) incorporation is proposed to enhance the field-effect passivation performance. Here, we report that simple annealing in a H2S ambient induced additional negative fixed charges at the interface between atomic-layer-deposited Al2O3 and nanostructured Si. Annealing at various temperatures allowed us to control the S concentration and the fixed charge density. The optimized S incorporation at the interface significantly enhanced the negative fixed charge density and the minority carrier lifetime up to similar to 5.9x10(12)cm(-2) and similar to 780s, respectively. As a result, the internal quantum efficiency was nearly two times higher in the blue response region than that of control cells without S incorporation. Copyright (C) 2017 John Wiley Sons, Ltd.
- URI
- https://onlinelibrary.wiley.com/doi/full/10.1002/pip.2873https://repository.hanyang.ac.kr/handle/20.500.11754/103250
- ISSN
- 1062-7995; 1099-159X
- DOI
- 10.1002/pip.2873
- Appears in Collections:
- COLLEGE OF ENGINEERING SCIENCES[E](공학대학) > MATERIALS SCIENCE AND CHEMICAL ENGINEERING(재료화학공학과) > Articles
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