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Electroless Ru/Cu Deposition Without Pd Activation for the Formation of Continuous Cu Seed Layers in High-Aspect-Ratio Via-Holes

Title
Electroless Ru/Cu Deposition Without Pd Activation for the Formation of Continuous Cu Seed Layers in High-Aspect-Ratio Via-Holes
Author
유봉영
Keywords
Activator; Electroless Deposition; Ru; Ruthenium; Via-Hole Lining; RU FILMS; CHEMICAL-VAPOR-DEPOSITION; COPPER DEPOSITION
Issue Date
2016-11
Publisher
AMER SCIENTIFIC PUBLISHERS
Citation
JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY, v. 16, No. 11, Page. 11267-11271
Abstract
As the aspect ratio of via-holes is increased, the difficulty in forming a conformal seed layer with sputtered Cu also increases, especially at the side-walls of the holes. Electroless deposition is a cost-effective, non-vacuum process; however, it requires the noble metal, Pd, during the activation process. In this study, we investigated the deposition of a continuous Cu lining in via-holes with an aspect ratio of 11 (5 mu m-width and 55 mu m-depth) using electrolessly deposited Ru as an activator instead of Pd on a Ta diffusion barrier layer. The electroless Ru deposition was successfully developed without an activation process. This was accomplished by increasing the hydrophilicity of the surface of the Ta barrier layer. The formed Ru layer can be utilized for the diffusion barrier as well as the activator. The bilayer barrier (Ru/Ta) may enhance the total diffusion barrier properties, allowing a reduction in the thickness of the Ta barrier layer while maintaining the same properties.
URI
http://www.ingentaconnect.com/content/asp/jnn/2016/00000016/00000011/art00027https://repository.hanyang.ac.kr/handle/20.500.11754/102988
ISSN
1533-4880
DOI
10.1166/jnn.2016.13491
Appears in Collections:
COLLEGE OF ENGINEERING SCIENCES[E](공학대학) > MATERIALS SCIENCE AND CHEMICAL ENGINEERING(재료화학공학과) > Articles
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