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Effect of the Laser-Scribing on Spalling of a Single Crystalline Si Using Electrodeposition Assisted Stripping (EAS) Process

Title
Effect of the Laser-Scribing on Spalling of a Single Crystalline Si Using Electrodeposition Assisted Stripping (EAS) Process
Author
유봉영
Keywords
Laser Scribing; Spalling; Thin Film Si; Thin Film Solar Cell; EAS Process; COST; SILICON SOLAR-CELLS
Issue Date
2016-10
Publisher
AMER SCIENTIFIC PUBLISHERS
Citation
JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY, v. 16, No. 10, Page. 10670-10674
Abstract
The single crystalline Si comprises a large proportion of the solar cell overall cost. Lowering its cost is directly related to the cost-reduction in the solar cell. Previously, electrodeposition assisted stripping (EAS) process was employed to obtain a thin Si substrate by applying the high tensile stress on top of Si wafer, which induced the delaminating behavior of thin Si layer. Such a high stress can induce by depositing a Ni layer onto the Si substrate. This stripping phenomenon occurred at the position where the maximum shear stress is applied, which is not on the Si surface but at a certain distance below the Si surface. This research aims to precisely control the initiation point of stripping the thin Si layer by generating intentional micro-cracks on the side of Si wafer. The pre-crack was created by a laser scribing on the side of Si wafer. Also, the process parameters which affected the thickness of stripped Si layer were systematically investigated.
URI
http://www.ingentaconnect.com/content/asp/jnn/2016/00000016/00000010/art00095https://repository.hanyang.ac.kr/handle/20.500.11754/102918
ISSN
1533-4880
DOI
10.1166/jnn.2016.13216
Appears in Collections:
COLLEGE OF ENGINEERING SCIENCES[E](공학대학) > MATERIALS SCIENCE AND CHEMICAL ENGINEERING(재료화학공학과) > Articles
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