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Ultrathin ZnS and ZnO Interfacial Passivation Layers for Atomic-Layer-Deposited HfO2 Films on InP Substrates

Title
Ultrathin ZnS and ZnO Interfacial Passivation Layers for Atomic-Layer-Deposited HfO2 Films on InP Substrates
Author
박태주
Keywords
atomic layer deposition; HfO2; InP; interfacial passivation layer; ZnS; SULFUR PASSIVATION; LEAKAGE CURRENT; THIN-FILMS; GAAS; GATE; DIELECTRICS; TRANSISTORS; OXIDES
Issue Date
2016-08
Publisher
AMER CHEMICAL SOC
Citation
ACS APPLIED MATERIALS & INTERFACES, v. 8, No. 32, Page. 20880-20884
Abstract
Ultrathin ZnS and ZnO films grown by atomic layer deposition (ALD) were employed as interfacial passivation layers (IPLs) for HfO2 films on InP substrates. The interfacial layer growth during the ALD of the HfO2 film was effectively suppressed by the IPLs, resulting in the decrease of electrical thickness, hysteresis, and interface state density. Compared with the ZnO IPL, the ZnS IPL was more effective in reducing the interface state density near the valence band edge. The leakage current density through the film was considerably lowered by the IPLs because the film crystallization was suppressed. Especially for the film with the ZnS IPL, the leakage current density in the low-voltage region was significantly lower than that observed for the film with the ZnO IPL, because the direct tunneling current was suppressed by the higher conduction band offset of ZnS with the InP substrate.
URI
https://pubs.acs.org/doi/abs/10.1021/acsami.6b06643https://repository.hanyang.ac.kr/handle/20.500.11754/102660
ISSN
1944-8244
DOI
10.1021/acsami.6b06643
Appears in Collections:
COLLEGE OF ENGINEERING SCIENCES[E](공학대학) > MATERIALS SCIENCE AND CHEMICAL ENGINEERING(재료화학공학과) > Articles
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