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Tristable switching of the electrical conductivity through graphene quantum dots sandwiched in multi-stacked poly(methyl methacrylate) layers

Title
Tristable switching of the electrical conductivity through graphene quantum dots sandwiched in multi-stacked poly(methyl methacrylate) layers
Author
김태환
Keywords
Tristable switching; Graphene quantum dot; Poly(methyl methacrylate); Electrical characteristic; Filament; Conduction mechanisms
Issue Date
2016-11
Publisher
ELSEVIER SCIENCE BV
Citation
ORGANIC ELECTRONICS, v. 38, Page. 379-383
Abstract
Tristable switching nonvolatile memory (NVM) devices based on graphene quantum dots (GQDs) sandwiched between multi-stacked poly (methyl methacrylate) (PMMA) layers were fabricated on indium-tin-oxide (ITO)-coated glass substrates by using a solution-processed method. Current-voltage (I-V) curves at 300 K for the silver nanowire/PMMA/GQD/PMMA/GQD/PMMA/ITO/glass devices showed tristable switching currents with high-resistance, intermediate-resistance, and low-resistance states. The device's cycling endurance of the three resistance states remained stable with a distinguishable value for each resistance state over 1000 cycles, and the obtained retention results showed well-distinguished resistance states without degradation for up to 1 x 10(4# s. Schottky emission, Poole-Frenkel emission, trapped-charge limited-current, and ohmic conduction were proposed as the dominant conduction mechanisms for the fabricated NVM devices based on the obtained I-V characteristics. The described energy-band diagrams confirm the proposed conduction band mechanisms. (C) 2016 Published by Elsevier B.V.
URI
https://www.sciencedirect.com/science/article/pii/S1566119916303901?via%3Dihubhttps://repository.hanyang.ac.kr/handle/20.500.11754/101109
ISSN
1566-1199; 1878-5530
DOI
10.1016/j.orgel.2016.09.010
Appears in Collections:
COLLEGE OF ENGINEERING[S](공과대학) > ELECTRONIC ENGINEERING(융합전자공학부) > Articles
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