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Doping Ratio Control of Fluorine-Doped Tin Oxide for a High-Quality Transparent Conducting Electrode

Title
Doping Ratio Control of Fluorine-Doped Tin Oxide for a High-Quality Transparent Conducting Electrode
Author
최성철
Keywords
Transparent Conducting Oxide; Fluorine Doped Tin Oxide; Spray Pyrolysis Deposition; Doping Ratio; Electrical Resistivity
Issue Date
2016-11
Publisher
AMER SCIENTIFIC PUBLISHERS
Citation
JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY, v. 16, NO. 11, Page. 11330-11334
Abstract
Transparent conducting oxides (TCOs) are very important materials for application in flat panel displays, thin-film solar cells, and touch panels. These days, the low-temperature synthesis of TCO thin films is being actively researched for realizing flexible electronics such as displays and solar cells. TCO thin films, mainly tin-doped indium oxide, are normally fabricated by high-vacuum sputtering. However, fluorine-doped tin oxide (FTO) has been in use for thin-film solar cells from the beginning. Our study attempts to lower the deposition temperature of FTO to 250 degrees C, which is suitable for deposition on polyimide substrates. We varied the F/Sn precursor ratio at different deposition temperatures, and found that a low F/Sn ratio of about 0.15 produces the lowest electrical resistivity below 350 degrees C, whereas a F/Sn ratio of 1.5 is obtained at 450 degrees C. At lower temperatures, crystal growth is very slow, and therefore, we should conduct very slow deposition to obtain high-quality TCO thin films.
URI
https://www.ingentaconnect.com/content/asp/jnn/2016/00000016/00000011/art00039;jsessionid=5hjejodp3gthf.x-ic-live-02https://repository.hanyang.ac.kr/handle/20.500.11754/100989
ISSN
1533-4880; 1533-4899
DOI
10.1166/jnn.2016.13503
Appears in Collections:
COLLEGE OF ENGINEERING[S](공과대학) > MATERIALS SCIENCE AND ENGINEERING(신소재공학부) > Articles
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