Full metadata record
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Bukhvalov, Danil | - |
dc.date.accessioned | 2019-03-19T06:27:47Z | - |
dc.date.available | 2019-03-19T06:27:47Z | - |
dc.date.issued | 2016-11 | - |
dc.identifier.citation | APPLIED SURFACE SCIENCE, v. 387, Page. 1093-1099 | en_US |
dc.identifier.issn | 0169-4332 | - |
dc.identifier.issn | 1873-5584 | - |
dc.identifier.uri | https://www.sciencedirect.com/science/article/pii/S0169433216314726?via%3Dihub | - |
dc.identifier.uri | https://repository.hanyang.ac.kr/handle/20.500.11754/100988 | - |
dc.description.abstract | An atomic and electronic structure of the bulk and thin-film morphologies of ZnO were modified using pulsed Bi-ion implantation (1 x 10(17) cm(-7) fluence, 70 min exposure under Bi-ion beam, E-Bi(+) =30 keV, pulsed ion-current density of not more than 0.8 mA/cm(2) with a repetition rate of 12.5Hz). The final samples were qualified by X-ray photoelectron core-level and valence band mapping spectroscopy applying ASTM materials science standard. The spectroscopy data obtained was discussed on the basis of DFT-models for Bi-embedding into ZnO host-matrices. It was established that in the case of direct Bi-impurities insertion into the employed ZnO-host for both studied morphologies neither the only "pure" Bi2O3-like phase nor the only "pure" Bi-metal will be preferable to appear as a secondary phase. An unfavorability of the large cluster agglomeration of Bi-impurities in ZnO-hosts has been shown and an oxygen 2s electronic states pleomorphizm was surely established. (C) 2016 Elsevier B.V. All rights reserved. | en_US |
dc.description.sponsorship | The synthesis of ZnO samples and posterior Bi ion-implantation treatment were supported by the Act 211 of the Government of the Russian Federation (Agreement No. 02.A03.21.0006) and the Government Assignment of Russian Ministry of Education and Science (Contract No. 3.1016.2014/K). The XPS qualification and analysis of the samples under study were supported by the Russian Science Foundation (Project No. 14-22-00004). | en_US |
dc.language.iso | en | en_US |
dc.publisher | ELSEVIER SCIENCE BV | en_US |
dc.subject | Zink oxide | en_US |
dc.subject | Ion implantation | en_US |
dc.subject | XPS measurements | en_US |
dc.subject | DFT modelling | en_US |
dc.title | XPS and DFT study of pulsed Bi-implantation of bulk and thin-films of ZnO-The role of oxygen imperfections | en_US |
dc.type | Article | en_US |
dc.relation.volume | 387 | - |
dc.identifier.doi | 10.1016/j.apsusc.2016.07.045 | - |
dc.relation.page | 1093-1099 | - |
dc.relation.journal | APPLIED SURFACE SCIENCE | - |
dc.contributor.googleauthor | Zatsepin, D.A. | - |
dc.contributor.googleauthor | Boukhvalov, D.W. | - |
dc.contributor.googleauthor | Gavrilov, N.V. | - |
dc.contributor.googleauthor | Kurmaev, E.Z. | - |
dc.contributor.googleauthor | Zhidkov, I.S. | - |
dc.relation.code | 2016002050 | - |
dc.sector.campus | S | - |
dc.sector.daehak | COLLEGE OF NATURAL SCIENCES[S] | - |
dc.sector.department | DEPARTMENT OF CHEMISTRY | - |
dc.identifier.pid | danil | - |
dc.identifier.researcherID | F-7517-2017 | - |
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