114 0

Full metadata record

DC FieldValueLanguage
dc.contributor.author박진성-
dc.date.accessioned2019-03-19T05:59:03Z-
dc.date.available2019-03-19T05:59:03Z-
dc.date.issued2016-11-
dc.identifier.citationACS APPLIED MATERIALS & INTERFACES, v. 8, NO. 49, Page. 33821-33828en_US
dc.identifier.issn1944-8244-
dc.identifier.urihttps://pubs.acs.org/doi/10.1021/acsami.6b11774-
dc.identifier.urihttps://repository.hanyang.ac.kr/handle/20.500.11754/100987-
dc.description.abstractAmorphous indium zinc oxide (IZO) thin films were deposited at different temperatures, by atomic layer deposition (ALD) using [1,1,1-trimethyl-N-(trimethylsilyl)silanaminato]indium (INCA-1) as the indium precursor, diethlzinc (DEZ) as the zinc precursor, and hydrogen peroxide (H2O2) as the reactant. The ALD process of IZO deposition was carried by repeated supercycles, including one cycle of indium oxide (In2O3) and one cycle of zinc oxide (ZnO). The IZO growth rate deviates from the sum of the respective In2O3 and ZnO growth rates at ALD growth temperatures of 150, 175, and 200 degrees C. We propose growth temperature-dependent surface reactions during the In2O3 cycle that correspond with the growth-rate results. Thin-film transistors (TFTs) were fabricated with the ALD-grown IZO thin films as the active layer. The amorphous IZO TFTs exhibited high mobility of 42.1 cm(2) V-1 s(-1) and good positive bias temperature stress stability. Finally, flexible IZO TFT was successfully fabricated on a polyimide substrate without performance degradation, showing the great potential of ALD-grown TFTs for flexible display applications.en_US
dc.description.sponsorshipThis research was mainly supported by the MOTIE (Ministry of Trade, Industry & Energy) (Project no. 10051403, 10052020, and 10052027) and KDRC (Korea Display Research Corporation). Also, this work was partially supported by the research fund of Samsung Display. In particular, the authors thank UP Chemical Company for supporting the INCA-1 precursor.en_US
dc.language.isoenen_US
dc.publisherAMER CHEMICAL SOCen_US
dc.subjectatomic layer depositionen_US
dc.subjectindium zinc oxideen_US
dc.subjectoxide semiconductoren_US
dc.subjectflexible TFTen_US
dc.subjectlow temperatureen_US
dc.subjecthigh mobilityen_US
dc.titleFlexible and High-Performance Amorphous Indium Zinc Oxide Thin-Film Transistor Using Low-Temperature Atomic Layer Depositionen_US
dc.typeArticleen_US
dc.relation.no49-
dc.relation.volume8-
dc.identifier.doi10.1021/acsami.6b11774-
dc.relation.page33821-33828-
dc.relation.journalACS APPLIED MATERIALS & INTERFACES-
dc.contributor.googleauthorSheng, Jiazhen-
dc.contributor.googleauthorLee, Hwan-Jae-
dc.contributor.googleauthorOh, Saeroonter-
dc.contributor.googleauthorPark, Jin-Seong-
dc.relation.code2016001740-
dc.sector.campusS-
dc.sector.daehakCOLLEGE OF ENGINEERING[S]-
dc.sector.departmentDIVISION OF MATERIALS SCIENCE AND ENGINEERING-
dc.identifier.pidjsparklime-
Appears in Collections:
COLLEGE OF ENGINEERING[S](공과대학) > MATERIALS SCIENCE AND ENGINEERING(신소재공학부) > Articles
Files in This Item:
There are no files associated with this item.
Export
RIS (EndNote)
XLS (Excel)
XML


qrcode

Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.

BROWSE