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Suppression of Persistent Photoconductivity in AlGaN/GaN Ultraviolet Photodetectors Using In Situ Heating

Title
Suppression of Persistent Photoconductivity in AlGaN/GaN Ultraviolet Photodetectors Using In Situ Heating
Author
소홍윤
Keywords
Gallium nitride; photodetector; sensors; MEMS; localized heating
Issue Date
2016-11
Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
Citation
IEEE ELECTRON DEVICE LETTERS, v.38, Issue1, Page. 56-59
Abstract
Photodetectors based on the AlGaN/GaN heterostructure suffer from persistent photoconductivity (PPC) in which recovery from the optical stimulus can take days. This behavior is unsuitable for many applications where reliable and consistent optical response is required. This letter presents a method for suppressing PPC in AlGaN/GaN photodetectors by employing device suspension and in situ heating. The highly conductive two-dimensional electron gas (2DEG) at the interface of AlGaN and GaN serves as both a sensor and a heater (via Joule heating). Microfabricated AlGaN/GaN-on-Si ultraviolet (UV) photodetectors (suspended and unsuspended) were exposed to UV (365 nm) for 60 s and the transient responses were measured under various in situ heating conditions. The measured transient response showed a decay time of ~39 h when the photodetector was not heated and 24 s for a suspended photodetector with in situ 2DEG heating (270°C with a power of 75 mW). This remarkable suppression of the PPC in AlGaN/GaN UV photodetectors can be attributed to the novel device architecture and in situ heating capability, which enables acceleration of the carrier capture rate during operation.
URI
https://ieeexplore.ieee.org/document/7738536https://repository.hanyang.ac.kr/handle/20.500.11754/100977
ISSN
0741-3106; 1558-0563
DOI
10.1109/LED.2016.2626388
Appears in Collections:
COLLEGE OF ENGINEERING[S](공과대학) > MECHANICAL ENGINEERING(기계공학부) > Articles
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