183 0

Full metadata record

DC FieldValueLanguage
dc.contributor.author최창환-
dc.date.accessioned2019-03-13T00:05:18Z-
dc.date.available2019-03-13T00:05:18Z-
dc.date.issued2016-11-
dc.identifier.citationJOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY, v. 16, NO 11, Page. 11658-11661en_US
dc.identifier.issn1533-4880-
dc.identifier.issn1533-4899-
dc.identifier.urihttps://www.ingentaconnect.com/content/asp/jnn/2016/00000016/00000011/art00105-
dc.identifier.urihttps://repository.hanyang.ac.kr/handle/20.500.11754/100724-
dc.description.abstractWe have demonstrated that post annealing could control the layer thickness of 2D MoS2 and SnS2 films transferred on a SiO2/Si substrate by varying the annealing temperature and time. Atomic force microscopy and Raman spectroscopy characterizations revealed that higher annealing temperature and longer treatment time led to thinner films, lower residues and fewer impurities on the surface of 2D materials. In addition, a higher possibility to attain few-layers on both 2D films was achieved using post annealing. The multiple layers of pristine films having the thickness over 15 nm were reduced down to bi-layers after annealing. We observed that the moderate annealing temperature of 450 degrees C on led to effective layer-thinning compared to the films annealed at 340 degrees C. The post annealing at 450 degrees C produced very smooth few-layers (˂= 4 nm thickness, ˃1 mu m size) of 2D MoS2 and SnS2. However, the 2D films decomposed or disappeared at temperature greater than 650 degrees C. In addition, process time also affected the number of layers and the sweet spot turned out to be 2 to 3 hours in our experiment.en_US
dc.description.sponsorshipThis research was supported by Basic Science Research Program through the National Research Foundation of Korea (NRF) funded by the Ministry of Education (2015R1D1A1A01060300).en_US
dc.language.isoenen_US
dc.publisherAMER SCIENTIFIC PUBLISHERSen_US
dc.subject2D Materialsen_US
dc.subjectMechanical Exfoliationen_US
dc.subjectAnnealingen_US
dc.subjectLayer-Thinningen_US
dc.subjectMoS2en_US
dc.subjectSnS2en_US
dc.titleThe Post Annealing to Control the Number of Layers of 2D MoS2 and SnS2en_US
dc.typeArticleen_US
dc.relation.no11-
dc.relation.volume16-
dc.identifier.doi10.1166/jnn.2016.13569-
dc.relation.page11658-11661-
dc.relation.journalJOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY-
dc.contributor.googleauthorChoi, Moonsuk-
dc.contributor.googleauthorLim, Donghwan-
dc.contributor.googleauthorSergeevich, Andrey Sokolov-
dc.contributor.googleauthorSon, Seok Ki-
dc.contributor.googleauthorKim, Young Jin-
dc.contributor.googleauthorHan, Hoon Hee-
dc.contributor.googleauthorChoi, Changhwan-
dc.relation.code2016003411-
dc.sector.campusS-
dc.sector.daehakCOLLEGE OF ENGINEERING[S]-
dc.sector.departmentDIVISION OF MATERIALS SCIENCE AND ENGINEERING-
dc.identifier.pidcchoi-
Appears in Collections:
COLLEGE OF ENGINEERING[S](공과대학) > MATERIALS SCIENCE AND ENGINEERING(신소재공학부) > Articles
Files in This Item:
There are no files associated with this item.
Export
RIS (EndNote)
XLS (Excel)
XML


qrcode

Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.

BROWSE