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dc.contributor.author최창환-
dc.date.accessioned2019-03-13T00:00:02Z-
dc.date.available2019-03-13T00:00:02Z-
dc.date.issued2016-11-
dc.identifier.citationJOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY, v. 16, NO 11, Page. 11745-11749en_US
dc.identifier.issn1533-4880-
dc.identifier.issn1533-4899-
dc.identifier.urihttps://www.ingentaconnect.com/content/asp/jnn/2016/00000016/00000011/art00122;jsessionid=28jei4cu8wcmq.x-ic-live-03#-
dc.identifier.urihttps://repository.hanyang.ac.kr/handle/20.500.11754/100722-
dc.description.abstractWe demonstrate the effect of the thermal annealing temperature (250 and 300 degrees C) on the performance (photosensitivity and temporal photoresponse) of an amorphous indium-gallium-zinc-oxide (alpha-IGZO) photodetector based on the TFT structure to visible radiation. Analysis of photosensitivity was performed to assess various sensing parameters, such as photoresponsivity (R-ph), threshold voltage (V-TH) shift, and subthreshold swing (SS). The photosensitivity was improved as the wavelength of light decreased and the annealing temperature increased. This was analyzed based on the activation energy for the ionization of an oxygen vacancy (V-o) and the concentration of Vo in relation to the thermal annealing condition. The temporal photoresponse of the alpha-IGZO device are also presented. The photoresponse times improved as the annealing temperature increased, which was due to the increase in the concentration of V-o functioning as a generation and recombination center with increasing annealing temperature.en_US
dc.description.sponsorshipThis research was supported by the Nano Material Technology Development Program through the National Research Foundation of Korea (NRF) funded by the Ministry of Education, Science and Technology (2015M3A7B7045496) and by the Human Resources Development program (No. 20144030200580) of the Korea Institute of Energy Technology Evaluation and Planning (KETEP) grant funded by the Korean government Ministry of Trade, Industry and Energy.en_US
dc.language.isoenen_US
dc.publisherAMER SCIENTIFIC PUBLISHERSen_US
dc.subjectAmorphous IGZOen_US
dc.subjectOxygen Vacancyen_US
dc.subjectThermal Annealingen_US
dc.subjectPhotodetectoren_US
dc.titleThe Effect of Post-Fabrication Annealing on an Amorphous IGZO Visible-Light Photodetectoren_US
dc.typeArticleen_US
dc.relation.no11-
dc.relation.volume16-
dc.identifier.doi10.1166/jnn.2016.13586-
dc.relation.page11745-11749-
dc.relation.journalJOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY-
dc.contributor.googleauthorPark, Yongkook-
dc.contributor.googleauthorPark, Hyung-Youl-
dc.contributor.googleauthorKang, Dong-Ho-
dc.contributor.googleauthorKim, Gwang-Sik-
dc.contributor.googleauthorLim, Donghwan-
dc.contributor.googleauthorYu, Hyun-Yong-
dc.contributor.googleauthorChoi, Changhwan-
dc.contributor.googleauthorPark, Jin-Hong-
dc.relation.code2016003411-
dc.sector.campusS-
dc.sector.daehakCOLLEGE OF ENGINEERING[S]-
dc.sector.departmentDIVISION OF MATERIALS SCIENCE AND ENGINEERING-
dc.identifier.pidcchoi-
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COLLEGE OF ENGINEERING[S](공과대학) > MATERIALS SCIENCE AND ENGINEERING(신소재공학부) > Articles
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