Full metadata record
DC Field | Value | Language |
---|---|---|
dc.contributor.author | 박진섭 | - |
dc.date.accessioned | 2019-03-07T02:07:12Z | - |
dc.date.available | 2019-03-07T02:07:12Z | - |
dc.date.issued | 2016-10 | - |
dc.identifier.citation | JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY, v. 16, NO 10, Page. 10268-10271 | en_US |
dc.identifier.issn | 1533-4880 | - |
dc.identifier.issn | 1533-4899 | - |
dc.identifier.uri | https://www.ingentaconnect.com/content/asp/jnn/2016/00000016/00000010/art00020 | - |
dc.identifier.uri | https://repository.hanyang.ac.kr/handle/20.500.11754/100571 | - |
dc.description.abstract | We report a simple method for fabricating AlGaN/GaN Schottky barrier diodes (SBDs) that include a graphene layer inserted between the AlGaN and Ni/Au metal layers. The insertion of a graphene interlayer between the Ni/Au metal pads and AlGaN layer produces a contact with ohmic characteristics. Ohmic and Schottky contacts were achieved by depositing graphene/Ni/Au and Ni/Au, respectively, on the AlGaN surface of SBD. The ohmic contacts formed using graphene/Ni/Au displayed a specific contact resistance of 0.23 Omega. cm(2). The optimum annealing temperature for improving device performance was found to be 500 degrees C. The graphene/metal electrode system suggested herein is promising for improving the electrical characteristics of AlGaN/GaN-based optoelectronic devices. | en_US |
dc.description.sponsorship | This research was supported by the Basic Science Research Program of the National Research Foundation of Korea (NRF), funded by the Ministry of Education, Science and Technology (NRF-2015R1A1A1A05027848). | en_US |
dc.language.iso | en | en_US |
dc.publisher | AMER SCIENTIFIC PUBLISHERS | en_US |
dc.subject | Graphene | en_US |
dc.subject | AlGaN/GaN | en_US |
dc.subject | Schottky Diode | en_US |
dc.subject | Ohmic Contact | en_US |
dc.subject | Schottky Contact | en_US |
dc.subject | Graphene/Ni/Au | en_US |
dc.title | Effect of a Graphene Interlayer on the Electrical Properties of an AlGaN/GaN Schottky Diode | en_US |
dc.type | Article | en_US |
dc.relation.no | 10 | - |
dc.relation.volume | 16 | - |
dc.identifier.doi | 10.1166/jnn.2016.13141 | - |
dc.relation.page | 10268-10271 | - |
dc.relation.journal | JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY | - |
dc.contributor.googleauthor | Kim, Yoon Hyung | - |
dc.contributor.googleauthor | Han, Sanghoo | - |
dc.contributor.googleauthor | Cho, Inje | - |
dc.contributor.googleauthor | Lee, Jaehoon | - |
dc.contributor.googleauthor | Park, Jinsub | - |
dc.relation.code | 2016003411 | - |
dc.sector.campus | S | - |
dc.sector.daehak | COLLEGE OF ENGINEERING[S] | - |
dc.sector.department | DEPARTMENT OF ELECTRONIC ENGINEERING | - |
dc.identifier.pid | jinsubpark | - |
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