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Effect of a Graphene Interlayer on the Electrical Properties of an AlGaN/GaN Schottky Diode

Title
Effect of a Graphene Interlayer on the Electrical Properties of an AlGaN/GaN Schottky Diode
Author
박진섭
Keywords
Graphene; AlGaN/GaN; Schottky Diode; Ohmic Contact; Schottky Contact; Graphene/Ni/Au
Issue Date
2016-10
Publisher
AMER SCIENTIFIC PUBLISHERS
Citation
JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY, v. 16, NO 10, Page. 10268-10271
Abstract
We report a simple method for fabricating AlGaN/GaN Schottky barrier diodes (SBDs) that include a graphene layer inserted between the AlGaN and Ni/Au metal layers. The insertion of a graphene interlayer between the Ni/Au metal pads and AlGaN layer produces a contact with ohmic characteristics. Ohmic and Schottky contacts were achieved by depositing graphene/Ni/Au and Ni/Au, respectively, on the AlGaN surface of SBD. The ohmic contacts formed using graphene/Ni/Au displayed a specific contact resistance of 0.23 Omega. cm(2). The optimum annealing temperature for improving device performance was found to be 500 degrees C. The graphene/metal electrode system suggested herein is promising for improving the electrical characteristics of AlGaN/GaN-based optoelectronic devices.
URI
https://www.ingentaconnect.com/content/asp/jnn/2016/00000016/00000010/art00020https://repository.hanyang.ac.kr/handle/20.500.11754/100571
ISSN
1533-4880; 1533-4899
DOI
10.1166/jnn.2016.13141
Appears in Collections:
COLLEGE OF ENGINEERING[S](공과대학) > ELECTRONIC ENGINEERING(융합전자공학부) > Articles
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