Ferroelectric domain size; Heated AFM; Activation energy
ELSEVIER SCIENCE BV
MATERIALS LETTERS, v. 168, Page. 134-137
We report the dependence of ferroelectric domain size of epitaxially grown PbTiO3 (PTO) thin films on Nb-doped SrTiO3 substrate to temperature. PbTiO3 exhibited well-defined ferroelectricity with a high remnant polarization of about 60 mu C/cm(2). Based on piezoelectric force microscopy (PFM) measurements, we confirmed that the ferroelectric domain size of PbTiO3 thin films depends on electric field and temperature. The minimum ferroelectric domain size could be reduced by the locally heated atomic force microscopy (h-AFM) technique. (C) 2016 Elsevier B.V. All rights reserved.