TY - JOUR AU - 전형탁 DA - 2014/11 PY - 2014 UR - http://www.sciencedirect.com/science/article/pii/S0257897214004071 UR - http://hdl.handle.net/20.500.11754/52767 AB - It is challenging to produce reliable Cu wiring on the nanometer scale for scaled-down devices. We studied the use of Co films deposited by plasma-enhanced atomic layer deposition (PEALD) using dicobalt hexacarbonyl tert-butylacetylene (CCTBA) as a precursor for Cu direct plating. Electrical properties of PEALD Co films of sub-20 nm thickness were determined by assessing continuities, morphologies, and impurities. To decrease the resistivity of Co films, a TaNx substrate was pre-treated with H-2 plasma and the flow rate of H-2 gas during CCTBA feeding and reactant feeding pulses was increased. Co films were deposited on a 3 nm-thick TaNx-covered SiO2 substrate with 24 nm-deep trenches, and Cu direct plating was successfully performed under conventional conditions. (C) 2014 Elsevier B.V. All rights reserved. PB - ELSEVIER SCIENCE SA, PO BOX 564, 1001 LAUSANNE, SWITZERLAND KW - Cobalt KW - Atomic layer deposition KW - Direct plating KW - CCTBA KW - Copper interconnect TI - Plasma-enhanced atomic layer deposition (PEALD) of cobalt thin films for copper direct electroplating VL - 259 DO - 10.1016/j.surfcoat.2014.05.005 T2 - SURFACE & COATINGS TECHNOLOGY ER -