TY - JOUR AU - 박재근 DA - 2015/08 PY - 2015 UR - https://www.nature.com/articles/srep13362?WT.ec_id=SREP-639-20150825&spMailingID=49395763&spUserID=ODkwMTM2NjQzMgS2&spJobID=743816990&spReportId=NzQzODE2OTkwS0 UR - http://hdl.handle.net/20.500.11754/26860 AB - Three-dimensional (3D) stackable memory devices including nano-scaled crossbar array are central for the realization of high-density non-volatile memory electronics. However, an essential sneak path issue affecting device performance in crossbar array remains a bottleneck and a grand challenge. Therefore, a suitable bidirectional selector as a two-way switch is required to facilitate a major breakthrough in the 3D crossbar array memory devices. Here, we show the excellent selectivity of all oxide p-/n-type semiconductor-based p-n-p open-based bipolar junction transistors as selectors in crossbar memory array. We report that bidirectional nonlinear characteristics of oxide p-n-p junctions can be highly enhanced by manipulating p-/n-type oxide semiconductor characteristics. We also propose an associated Zener tunneling mechanism that explains the unique features of our p-n-p selector. Our experimental findings are further extended to confirm the profound functionality of oxide p-n-p selectors integrated with several bipolar resistive switching memory elements working as storage nodes. PB - NATURE PUBLISHING GROUP KW - NONVOLATILE MEMORY DEVICE KW - TRANSITION-METAL OXIDES KW - HIGH-CURRENT-DENSITY KW - THIN-FILMS KW - RESISTIVE SWITCHES KW - STORAGE KW - TRANSISTORS KW - DIODES TI - All oxide semiconductor-based bidirectional vertical p-n-p selectors for 3D stackable crossbar-array electronics VL - 5 DO - 10.1038/srep13362 T2 - SCIENTIFIC REPORTS ER -