TY - JOUR AU - 오혜근 DA - 2004/05 PY - 2004 UR - https://repository.hanyang.ac.kr/handle/20.500.11754/132069 UR - https://www.spiedigitallibrary.org/conference-proceedings-of-spie/5374/1/Exposure-simulation-of-electron-beam-microcolumn-lithography/10.1117/12.537128.short AB - We propose an improved method to describe the electron-resist interaction based on Dill’s model for exposure simulation. For this purpose, Monte Carlo simulation was performed to obtain the energy intensity distribution in the chemically amplified resist. Tabulated Mott data for elastic scattering, Moller and Vriens cross sections for inelastic scattering, and Modified Bethe equation plus discrete energy loss for energy loss are used for the calculation of the energy intensity distribution. Through the electron-resist interaction, the energy intensity distribution changes resist components into the exposure production such as the photoacid concentration or the photoacid generator inside resists with various pattern shapes by using the modified Dill’s model. Our simulation profiles show a good agreement with experimental profiles. PB - SPIE KW - Monte Carlo methods KW - Optical simulations KW - Electron beam lithography KW - Beam shaping KW - Electron beams KW - Lithography KW - Scattering TI - Exposure simulation of electron beam microcolumn lithography DO - 10.1117/12.537128 ER -