TY - JOUR AU - 소홍윤 DA - 2017/06 PY - 2017 UR - https://aip.scitation.org/doi/10.1063/1.4986910 UR - https://repository.hanyang.ac.kr/handle/20.500.11754/114408 AB - In this paper, we describe the use of 50nm atomic layer deposited (ALD) Al2O3 to suppress the interfacial reaction and inter-diffusion between the gate metal and semiconductor interface, to extend the operation limit up to 600 degrees C in air. Suppression of diffusion is verified through Auger electron spectroscopy (AES) depth profiling and X-ray diffraction (XRD) and is further supported with electrical characterization. An ALD Al2O3 thin film (10nm and 50 nm), which functions as a dielectric layer, was inserted between the gate metal (Ni/Au) and heterostructure-based semiconductor material (AlGaN/GaN) to form a metal-insulator-semiconductor high electron mobility transistor (MIS-HEMT). This extended the 50nm ALD Al2O3 MIS-HEMT (50-MIS) current-voltage (I-ds-V-ds) and gate leakage (I-g,I-leakage) characteristics up to 600 degrees C. Both, the 10nm ALD Al2O3 MIS-HEMT (10-MIS) and HEMT, failed above 350 degrees C, as evidenced by a sudden increase of approximately 50 times and 5.3 x 10(6) times in I-g,I-leakage, respectively. AES on the HEMT revealed the formation of a Ni-Au alloy and Ni present in the active region. Additionally, XRD showed existence of metal gallides in the HEMT. The 50-MIS enables the operation of AlGaN/GaN based electronics in oxidizing high-temperature environments, by suppressing interfacial reaction and inter-diffusion of the gate metal with the semiconductor. Published by AIP Publishing. PB - AMER INST PHYSICS KW - ELECTRON-MOBILITY TRANSISTORS KW - HIGH-TEMPERATURE PERFORMANCE KW - HIGH-K DIELECTRICS KW - THERMAL-STABILITY KW - SCHOTTKY CONTACT KW - OHMIC CONTACTS KW - N-GAN KW - GALLIUM NITRIDE KW - SI SUBSTRATE KW - HETEROSTRUCTURE TI - Thickness engineering of atomic layer deposited Al2O3 films to suppress interfacial reaction and diffusion of Ni/Au gate metal in AlGaN/GaN HEMTs up to 600 degrees C in air IS - 25 VL - 110 DO - 10.1063/1.4986910 T2 - APPLIED PHYSICS LETTERS ER -