성명모
2018-08-28T06:01:58Z
2018-08-28T06:01:58Z
2016-07
RSC ADVANCES (2016), v. 6, NO. 73, Page. 69027-69032
2046-2069
http://pubs.rsc.org/en/Content/ArticleLanding/2016/RA/C6RA13430K#!divAbstract
https://repository.hanyang.ac.kr/handle/20.500.11754/74545
Zinc oxide (ZnO) is considered as the strongest alternative to tin doped indium oxide (ITO) - a commonly used, but an expensive state-of-the-art material for transparent conducting electrodes. This work reports the low temperature atomic layer deposition (ALD) of a highly transparent, and highly conductive air-stable thin film of ZnO under in situ UV irradiation of the growing film. X-ray photoelectron spectroscopy (XPS) reveals that the UV irradiation generates oxygen vacancies, partially removes O-H bonds, and thereby improves the electrical conductivity. Thus, in contrast to 0.25 U cm resistivity of the pristine ZnO film, the in situ UV irradiated ZnO film shows an electrical resistivity of 5.5 x 10(-4) U cm, and an optical transparency of nearly 90%, which are closer to that of ITO. In addition, even on prolonged exposure of the film to air, it demonstrates high stability against the degradation of the electrical conductivity.
This work was supported by the Nano Material Technology Development Program (2012M3A7B4034985), and by Creative Materials Discovery Program (2015M3D1A1068061) through the National Research Foundation of Korea (NRF) funded by the Ministry of Science, ICT & Future Planning. This work was also supported by a grant from the National Research Foundation of Korea (NRF), funded by the Korea government (MIST) (No.2014R1A2A1A10050257).
en
ROYAL SOC CHEMISTRY
ZINC-OXIDE
DOPED ZNO
SOLAR-CELLS
TEMPERATURE
GROWTH
OXYGEN
Highly conductive air-stable ZnO thin film formation under in situ UV illumination for an indium-free transparent electrode
Article
73
6
10.1039/c6ra13430k
69027-69032
RSC ADVANCES
Cho, Boram
Kim, Hongbum
Yang, Dasom
Shrestha, Nabeen K.
Sung, Myung Mo
2016010115
S
COLLEGE OF NATURAL SCIENCES[S]
DEPARTMENT OF CHEMISTRY
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