박진성
2018-04-19T23:49:34Z
2018-04-19T23:49:34Z
2012-01
JAPANESE JOURNAL OF APPLIED PHYSICS, Vol.51, No.1 [2012], p015601 ~ 0156014
0021-4922
http://iopscience.iop.org/article/10.1143/JJAP.51.015601/meta
https://repository.hanyang.ac.kr/handle/20.500.11754/70028
This paper reports the crystallization of amorphous InGaZnO (a-IGZO) films using solid-phase crystallization and discusses the mechanisms responsible for degradation of device performance after crystallization. The field-effect mobility (mu(FE)) and subthreshold gate swing (S) value of the nanocrystallite embedded-IGZO thin-film transistors (TFTs) were significantly degraded to 3.12 cm(2) V-1 s(-1) and 1.26 V/decade, respectively, compared to those (13.72 cm(2) V-1 s(-1) and 0.38 V/decade) for the a-IGZO TFTs. The decreased mu(FE) is explained based on indium deficiency by diffusion of its atoms in the channel layer and grain-boundary trapping of mobile carriers. The predominant mechanism of increasing S value has been attributed to increased interface and grain-boundary trapping.
This work was supported by the National Research Foundation of Korea (NRF) grant funded by the Korean Ministry of Education, Science and Technology (MEST, No. 2007-0055837).
en
IOP Publishing
AMORPHOUS OXIDE SEMICONDUCTORS
Origin of Device Performance Degradation in InGaZnO Thin-Film Transistors after Crystallization
Article
51
10.1143/JJAP.51.015601
1-4
JAPANESE JOURNAL OF APPLIED PHYSICS
Ahn, B.D.
Shin, H.S.
Kim, D.L.
Lee, S.M.
Park, J.-S.
Kim, G.H.
Kim, H.J.
2012217131
S
COLLEGE OF ENGINEERING[S]
DIVISION OF MATERIALS SCIENCE AND ENGINEERING
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