박재근
2017-09-08T00:24:54Z
2017-09-08T00:24:54Z
2015-11
NANOTECHNOLOGY, v. 26, NO 47, Page. 475705-475705
0957-4484
1361-6528
http://iopscience.iop.org/article/10.1088/0957-4484/26/47/475705/meta;jsessionid=1EEEF1EF341C8BFB0A2E67E32DD1C5C0.c4.iopscience.cld.iop.org
http://hdl.handle.net/20.500.11754/28964
We design a Co2Fe6B2/MgO-based p-MTJ spin-valve without a [Co/Pt](n) lower synthetic-antiferromagnetic (SyAF) layer to greatly reduce the 12-inch wafer fabrication cost of the p-MTJ spin-valve. This spin-valve achieve a tunneling magnetoresistance (TMR) of 158% and an exchange field (H-ex) of 1.4 kOe at an ex situ annealing temperature of ˃350 degrees C, which ensures writing error immunity. In particular, the TMR ratio strongly depends on the body-center-cubic capping-layer nanoscale thickness (t(bcc)), i.e., the TMR ratio peaks at t(bcc) = 0.6 nm.
This research was supported by the Basic Science Research Program through the National Research Foundation of Korea (NRF) funded by the Ministry of Education (No.2014R1-A2A1A01006474) and the Brain Korea 21 PLUS Program in 2014.
en
IOP PUBLISHING LTD
magnetic-tunnel-junction
perpendicular-spin-transfer-torque-magnetic-random-access-memory
synthetic-antiferromagnetic
tunneling magneto-resistance ratio
exchange field
Co2Fe6B2/MgO-based perpendicular spin-transfer-torque magnetic-tunnel-junction spin-valve without [Co/Pt](n) lower synthetic-antiferromagnetic layer
Article
47
26
10.1088/0957-4484/26/47/475705
475705-475705
NANOTECHNOLOGY
Lee, Seung-Eun
Shim, Tae-Hun
Park, Jea-Gun
2015001023
S
COLLEGE OF ENGINEERING[S]
DEPARTMENT OF ELECTRONIC ENGINEERING
parkjgl