안진호
2021-05-17T01:25:41Z
2021-05-17T01:25:41Z
2020-03
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, v. 38, no. 3, article no. 032405
0734-2101
1520-8559
https://avs.scitation.org/doi/10.1116/1.5134828
https://repository.hanyang.ac.kr/handle/20.500.11754/162068
Nanocrystalline HfOx films were synthesized by an atomic layer deposition method using Hf[N(CH3)C2H5](4) as the metal precursor and La(NO3)(3)center dot 6H(2)O solution as the oxidant. La(NO3)(3)center dot 6H(2)O solution played the role of both oxidant and catalyst, catalytic oxidant, where the La element in the deposited HfOx films was under the detection limit. The introduction of La(NO3)(3)center dot 6H(2)O solution instead of H2O effectively altered the surface roughness, crystalline status, and resistive switching properties of HfOx films. Although the crystalline structures of both HfOx films made with La(NO3)(3)center dot 6H(2)O solution and H2O were monoclinic, the surface roughness of the HfOx film grown by using the La(NO3)(3)center dot 6H(2)O solution oxidant is smoother than that using H2O. Moreover, resistive switching characteristics of the HfOx insulator deposited with the La(NO3)(3)center dot 6H(2)O solution oxidant enhanced not only uniformity of switching parameters but also endurance.
This work was supported by the Basic Science Research Program (No. 2012R1A6A1029029), the Nano Material Technology Development Program (No. 2016M3A7B4910429), and the Creative Materials Discovery Program on Creative Multilevel Research Center (No. 2015M3D1A1068061) through the National Research Foundation of Korea (NRF) funded by the Ministry of Education and the Ministry of Science and ICT.
en
A V S AMER INST PHYSICS
THIN-FILMS
Enhanced resistive switching characteristics of HfOx insulator fabricated by atomic layer deposition and La(NO3)(3)center dot 6H(2)O solution as catalytic oxidant
Article
3
38
10.1116/1.5134828
1-8
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A
Jung, Yong Chan
Park, In-Sung
Seong, Sejong
Lee, Taehoon
Kim, Seon Yong
Ahn, Jinho
2020048759
S
COLLEGE OF ENGINEERING[S]
DIVISION OF MATERIALS SCIENCE AND ENGINEERING
jhahn