κΉνν
2019-11-26T05:32:09Z
2019-11-26T05:32:09Z
2017-06
JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY, v. 17, no. 6, page. 4173-4175
1533-4880
1533-4899
https://www.ingentaconnect.com/content/asp/jnn/2017/00000017/00000006/art00086
https://repository.hanyang.ac.kr/handle/20.500.11754/114596
The vertical NAND flash memory devices with asymmetric string structure were introduced in order to reduce the word-line interference, and their electric characteristics were investigated as functions of the asymmetric factor (AF) by using technology computer-aided design (TCAD) sentaurus simulation tool. The difference in the threshold voltage (V-th) shift of the target cell was decreased with increasing AF; it was 0.435 x 10(-3) V at AF of 0 nm, and 0.009 x 10(-3) V at AF of 40 nm. This reduction of the word-line interference for vertical NAND flash memory devices with an increased AF was explained by the increased average distance between the target cell and the three closest cells located at the adjacent string.
This research was supported by Basic Science Research Program through the National Research Foundation of Korea (NRF) funded by the Ministry of Education, Science and Technology (2016R1A2A1A05005502), and this research was partially supported by Samsung Electronics Co.
en_US
AMER SCIENTIFIC PUBLISHERS
Vertical NAND Flash Memory
Word-Line Interference
Poly-Silicon Channel
Charge Trapping Layer
Threshold Voltage Shift
Effects of Asymmetric String Structure on Word-Line Interference in the Vertical NAND Flash Memory Devices
Article
6
17
10.1166/jnn.2017.13425
4173-4175
JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY
Lee, Jun Gyu
Yoo, Keon-Ho
Kim, Tae Whan
2017011537
S
COLLEGE OF ENGINEERING[S]
DEPARTMENT OF ELECTRONIC ENGINEERING
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