전형탁
2019-04-10T01:20:37Z
2019-04-10T01:20:37Z
2016-12
APPLIED PHYSICS LETTERS, v. 109, Issue 24, No. 242104
0003-6951
1077-3118
https://aip.scitation.org/doi/10.1063/1.4971386
https://repository.hanyang.ac.kr/handle/20.500.11754/101652
MoS2 layers were prepared by sulfurization at temperatures ranging from 500 degrees C to 900 degrees C. Various microscopic analyses confirmed that the different sulfurization treatments altered the nanostructure of the MoS2 layers. Nanostructure alterations and enhanced crystallinity were observed at temperatures exceeding 800 degrees C. The electrical properties of field-effect transistor devices fabricated from the MoS2 layers were investigated in relation to sulfurization temperature. The field-effect mobility of the MoS2 layers significantly increased with rising sulfurization temperature. The change in nanostructure and the transition to a horizontally aligned microstructure at temperatures over 800 degrees C were explicitly correlated with the change in field-effect mobility. Published by AIP Publishing.
The authors, J.-K. Lee et al., appreciate the financial support from the KIST Institution Program (Program Nos. 2E26390). This study was supported by a National Research Foundation (NRF) of Korea grant funded by the Korean Government (MEST) (NRF-2014M3A7B4049367).
en
AMER INST PHYSICS
TRANSITION-METAL DICHALCOGENIDES
LAYER MOS2
TRANSISTORS
HETEROSTRUCTURES
DEPOSITION
CRYSTALS
FILMS
Correlation of nanostructure changes with the electrical properties of molybdenum disulfide (MoS2) as affected by sulfurization temperature
Article
24
109
10.1063/1.4971386
242104-242104
APPLIED PHYSICS LETTERS
Oh, Tae-Kyung
Ju, Hyunsu
Jeon, Hyeongtag
Lee, Jeon-Kook
2016003157
S
COLLEGE OF ENGINEERING[S]
DIVISION OF MATERIALS SCIENCE AND ENGINEERING
hjeon
http://orcid.org/0000-0003-2502-7413