2001-02 | 1.55㎛ InGaAsP/InGaAsP MQW 광흡수 변조기에서 구조변수가 소광특성에 미치는 영향 | 심종인 |
2000-09 | 1.55㎛ InGaAsP/InGaAsP 다중양자우물 구조전계흡수형 광변조기에서 캐리어 수송현상이 소광특성에 미치는 영향 | 심종인 |
2001-11 | 1.55㎛ MQW EA-Modulator의 구조변수가 소광특성 및 chirp 에 미치는 영향 | 심종인 |
2001-07 | 1.5㎛ Wavelength Distributed Reflector Lasers with Vertical Grating | 심종인 |
2006-07 | A 10-Gb/s planar InGaAs/InP avalanche photodiode with a thin multiplication layer fabricated by using recess-etching and single-diffusion processes | 심종인 |
2004-08 | 10Gb/s XFP Transceiver용 Transmitter Optical Sub-assembly(TOSA)의 RF설계/제작 및 주파수 특성 해석 | 심종인 |
2007-04 | 3차원 회로 모델링을 이용한 청색 GaN/InGaN LED의 전류 확산 효과에 관한 연구 | 심종인 |
2007-04 | 3차원의 회로 모델링을 이용한 청색 GaN/InGaN LED의 전류 확산 효과에 관한 연구 | 심종인 |
2003-11 | A compact multilayer IC package model for efficient simulation, analysis, and design of high-performance VLSI circuits | 심종인 |
1996-10 | A computational method of determining reflectance at abrupt waveguide interfaces | 심종인 |
2004-09 | A decoupling technique for efficient timing analysis of VLSI interconnects with dynam.ic circuit switching | 심종인 |
2005-10 | A measurement method of the resonantly enhanced gain spectrum and its effect on second harmonic generation in Vertical-External-Cavity Surface-Emitting Laser (VECSEL) | 심종인 |
2008-05 | A method for current spreading analysis and electrode pattern design in light-emitting diodes | 심종인 |
2007-08 | A new method for measurement of the fundamental device parameters in a GaN-based light emitting diode | 심종인 |
2007-02 | A simple method for measurement of the alpha-factor in semiconductor Fabry-Perot lasers operating above threshold | 심종인 |
2002-06 | A traveling-wave-based waveform approximation technique for the timing verification of single transmission lines | 심종인 |
2011-04 | An Explanation of Efficiency Droop in InGaN-based Light Emitting Diodes: Saturated Radiative Recombination Rate at Randomly Distributed In-Rich Active Areas | 심종인 |
2003-12 | Analog Characterization of Low-Voltage MQW Traveling-Wave Electroabsorption Modulators | 심종인 |
2017-04 | Analysis of carrier recombination dynamics in InGaN-based light-emitting diodes by differential carrier lifetime measurement | 심종인 |
2021-03 | Analysis of degradation mechanisms in GaN-based light-emitting diodes under reverse-bias stress: effects of defects and junction-temperature increase | 심종인 |