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Showing results 1 to 30 of 75

Issue DateTitleAuthor(s)
2020-01Active efficiency as a key parameter for understanding the efficiency droop in InGaN-based light-emitting diodes신동수
2017-05Analysis of carrier recombination dynamics in InGaN-based light-emitting diodes by differential carrier lifetime measurement신동수
2021-03Analysis of degradation mechanisms in GaN-based light-emitting diodes under reverse-bias stress: effects of defects and junction-temperature increases신동수
2012-03Analysis of efficiency droop in nitride light-emitting diodes by the reduced effective volume of InGaN active material신동수
2015-02Analysis of nonradiative recombination mechanisms and their impacts on the device performance of InGaN/GaN light-emitting diodes신동수
2021-08Analysis of transient degradation behaviors of organic light-emitting diodes under electrical stress신동수
2017-12Carrier accumulation in the active region and its impact on the device performance of InGaN-based light-emitting diodes신동수
2005-04Chirp parameter of electroabsorption modulators with InGaAsP intrastep quantum wells신동수
2015-02Conduction Mechanisms of Leakage Currents in InGaN/GaN-Based Light-Emitting Diodes신동수
2013-09Correlation between the efficiency droop and the blueshift of the electroluminescence in InGaN/GaN multiple-quantum-well blue light-emitting diodes신동수
2005-09Critical aspect of curing epoxy adhesive: fiber pistoning of LC connector신동수
2019-01Current–voltage characteristics of InGaN/GaN blue light-emitting diodes investigated by photovoltaic parameters신동수
2013-05Current, voltage and temperature distribution modeling of light-emitting diodes based on electrical and thermal circuit analysis신동수
2019-05Current- and temperature-dependent efficiency droops in InGaN-based blue and AlGaInP-based red light-emitting diodes신동수
2013-05Determination of the effect of a strain relaxation layer on the internal electric field measurement in an InGaN/GaN multiple-quantum-well structure by using electroreflectance spectroscopy신동수
2005-08Effect of a step barrier on the quantum-confined Stark effect and applications to electroabsorption modulators with high saturation optical power신동수
2021-11Effect of defects on strain relaxation in InGaN/AlGaN multiple-quantum-well near-ultraviolet light-emitting diodes신동수
2015-05Effects of the number of quantum wells on the performance of near-ultraviolet light-emitting diodes신동수
2016-08Effects of unbalanced carrier injection on the performance characteristics of InGaN light-emitting diodes신동수
2012-03Efficiency droop in AlGaInP and GaInN light-emitting diodes신동수
2011-01An efficiency droop model of the saturated radiative recombination rate and its verification by radiative and nonradiative carrier lifetime measurements in InGaN-based light emitting diodes신동수
2019-03Enhanced radiative recombination rate by local potential fluctuation in InGaN/AlGaN near-ultraviolet light-emitting diodes신동수
2015-02Enhancement in third-order output intercept point of high-power photodiodes by nonlinear voltage- and current-dependent responsivities신동수
2012-06Estimate of the nonradiative carrier lifetime in InGaN/GaN quantum well structures by using time-resolved photoluminescence신동수
2011-03An explanation of efficiency droop in InGaN-based light emitting diodes: Saturated radiative recombination rate at randomly distributed In-rich active areas신동수
2018-02Factors Determining the Carrier Distribution in InGaN/GaN Multiple-Quantum-Well Light-Emitting Diodes신동수
2016-11Forward-Capacitance Measurement on Wide-Bandgap Light-Emitting Diodes신동수
2012-03Gain-bandwidth relation of electroabsorption-modulated analogue fibre link: effect of photocurrent resistance신동수
2012-04GaN계 청색 발광 다이오드에서 저전류 스트레스 후의 광 및 전기적 특성 변화신동수
2007-08Ground Slot을 이용한 나선구조 칩 안테나 설계신동수