Browsing byAuthor신동수

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Showing results 1 to 30 of 183

Issue DateTitleAuthor(s)
2007-1060 GHz band RF/RoF link characteristics of enhanced optical transmitter SoP module신동수
2008-0760-GHz System-on-Packaging Transmitter for Radio-Over-Fiber Applications신동수
2020-01Active efficiency as a key parameter for understanding the efficiency droop in InGaN-based light-emitting diodes신동수
2011-03An efficiency droop model of the saturated radiative recombination rate and its verification by radiative and nonradiative carrier lifetime measurements in InGaN-based light emitting diodes신동수
2011-04An Explanation of Efficiency Droop in InGaN-based Light Emitting Diodes: Saturated Radiative Recombination Rate at Randomly Distributed In-Rich Active Areas신동수
2017-05Analysis of carrier recombination dynamics in InGaN-based light-emitting diodes by differential carrier lifetime measurement신동수
2017-05Analysis of carrier recombination dynamics in InGaN-based light-emitting diodes by differential carrier lifetime measurement신동수
2021-03Analysis of degradation mechanisms in GaN-based light-emitting diodes under reverse-bias stress: effects of defects and junction-temperature increase신동수
2021-03Analysis of degradation mechanisms in GaN-based light-emitting diodes under reverse-bias stress: effects of defects and junction-temperature increases신동수
2012-03Analysis of efficiency droop in nitride light-emitting diodes by the reduced effective volume of InGaN active material신동수
2012-03Analysis of efficiency droop in nitride light-emitting diodes by the reduced effective volume of InGaN active material신동수
2015-02Analysis of nonradiative recombination mechanisms and their impacts on the device performance of InGaN/GaN light-emitting diodes신동수
2015-02Analysis of nonradiative recombination mechanisms and their impacts on the device performance of InGaN/GaN light-emitting diodes신동수
2014-11Analysis of recombination mechanisms in InGaN-based light-emitting diodes from electrical and optical characterizations신동수
2010-06Analysis of the stress distribution in the nonuniformly bent GaN thin film grown on a sapphire substrate신동수
2010-11Analysis of Time-resolved Photoluminescence of InGaN Quantum Wells Using the Carrier Rate Equation신동수
2021-08Analysis of transient degradation behaviors of organic light-emitting diodes under electrical stress신동수
2006-03Anisotropic plasma effects on electron capture process in an anisotropic plasma신동수
2006-08Application of epoxy-based photosensitive polymers for optical MEMS and subsequent reliability evaluation신동수
2017-12Carrier accumulation in the active region and its impact on the device performance of InGaN-based light-emitting diodes신동수
2017-12Carrier accumulation in the active region and its impact on the device performance of InGaN-based light-emitting diodes신동수
2015-12Carrier overflow in InGaN/GaN light-emitting diodes investigated by temperature-dependent short-circuit current characteristics신동수
2006-10Characteristics of 60-Ghz analog optical transmitter modules for radio-over-fiber applications신동수
2005-04Chirp parameter of electroabsorption modulators with InGaAsP intrastep quantum wells신동수
2006-11Chromeless phase lithography using scattering bars and zebra patterns신동수
2015-02Conduction Mechanisms of Leakage Currents in InGaN/GaN-Based Light-Emitting Diodes신동수
2015-02Conduction Mechanisms of Leakage Currents in InGaN/GaN-Based Light-Emitting Diodes신동수
2013-09Correlation between the efficiency droop and the blueshift of the electroluminescence in InGaN/GaN multiple-quantum-well blue light-emitting diodes신동수
2013-09Correlation between the efficiency droop and the blueshift of the electroluminescence in InGaN/GaN multiple-quantum-well blue light-emitting diodes신동수
2005-09Critical aspect of curing epoxy adhesive: fiber pistoning of LC connector신동수

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