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Showing results 1 to 30 of 75

Issue DateTitleAuthor(s)
2016-063차원 구조 NAND flash memory의 mechanical stress 분포 및 온도 영향성에 관한 연송윤흡
2014-063차원 구조의 NAND flash memory에서 적층수 증가에 따른 문턱전압 산포 문제에 대한 연구송윤흡
2019-12Bidirectional Selector Utilizing Hybrid Diodes for PCRAM Applications송윤흡
2011-08Bidirectional Two-Terminal Switching Device for Crossbar Array Architecture송윤흡
2012-04Bidirectional Two-Terminal Switching Device for Non-Volatile Random Access Memory송윤흡
2012-09Bidirectional Two-Terminal Switching Device Using Schottky Barrier for Spin-Transfer-Torque Magnetic Random Access Memory송윤흡
2013-07Bidirectional Two-Terminal Switching Device with Metal-Semiconductor-Semiconductor Structures for 4F(2) Spin-Transfer-Torque Magnetoresistance Random Access Memory Cell송윤흡
2014-10A capacitive biosensor using buried electrodes for the discrimination of whole-cells송윤흡
2012-06Cell characteristics of FePt nano-dot memories with a high-k Al2O3 blocking oxide송윤흡
2019-04Comparative Study on Performance of IGZO Transistors With Sputtered and Atomic Layer Deposited Channel Layer송윤흡
2018-04Contact resistance change memory using N-doped Cr2Ge2Te6 phase-change material showing non-bulk resistance change송윤흡
2016-06Contact resistivity of amorphous and crystalline GeCu2Te3 to W electrode for phase change random access memory송윤흡
2016-01Degradation Characteristics of MgO Based Magnetic Tunnel Junction Caused by Surface Roughness of Ta/Ru Buffer Layers송윤흡
2017-10Design and Fabrication of Capacitive Silicon Nanomechanical Resonators with Selective Vibration of a High-Order Mode송윤흡
2019-10Design of FPGA-Based LZ77 Compressor With Runtime Configurable Compression Ratio and Throughput송윤흡
2017-10A Dummy Cell Added Neural Network Using in Pattern Recognition for Prevention of Failed Events송윤흡
2014-04Effect of an Interface Mg Insertion Layer on the Reliability of a Magnetic Tunnel Junction based on a Co2FeAl Full-Heusler Alloy송윤흡
2018-08The Effect of Mechanical Stress on Cell Characteristics in MONOS Structures송윤흡
2016-03Effect of Mg insertion on stress-induced resistance drift in MgO-based magnetic tunnel junctions송윤흡
2016-06Effect of Mg insertion on time-dependent dielectric breakdown in MgO-based magnetic tunnel junctions송윤흡
2014-01Effect of the trap level of the silicon nitride layer on the retention characteristics of GAA-MONOS charge trap memories at elevated temperature송윤흡
2019-02The Effect of Tungsten Volume on Residual Stress and Cell Characteristics in MONOS송윤흡
2017-08Endurance of magnetic tunnel junctions under dynamic voltage stress송윤흡
2017-05Fabrication and evaluation of capacitive silicon resonators with piezoresistive heat engines송윤흡
2016-04Fabrication of Vacuum-Sealed Capacitive Micromachined Ultrasonic Transducer Arrays Using Glass Reflow Process송윤흡
2017-07GaSb/InGaAs 2-dimensional hole gas grown on InP substrate for III-V CMOS applications송윤흡
2018-08High hole mobility in strained In0.25Ga0.75Sb quantum well with high quality Al0.95Ga0.05Sb buffer layer송윤흡
2016-10Impact of contact resistance on memory window in phase-change random access memory (PCRAM)송윤흡
2018-09Impact of etch angles on cell characteristics in 3D NAND flash memory송윤흡
2017-12Impact of Grain Length and Grain Boundary on Dispersion of Threshold Voltage for 3-Dimensional Gate-All-Around Polysilicon Channel Memory송윤흡