2019-08 | The observation of resistive switching characteristics using transparent and biocompatible Cu2+-doped salmon DNA composite thin film | 최창환 |
2020-10 | Optically Excited Threshold Switching Synapse Characteristics on Nitrogen-doped Graphene Oxide Quantum Dots (N-GOQDs) | 최창환 |
2022-04 | Optimizing the thickness of Ta2O5 interfacial barrier layer to limit the oxidization of Ta ohmic interface and ZrO2 switching layer for multilevel data storage | 최창환 |
2020-12 | Partially Oxidized MXene Ti3C2Tx Sheets for Memristor having Synapse and Threshold Resistive Switching Characteristics | 최창환 |
2012-10 | Performance of organic field effect transistors with high-k gate oxide after application of consecutive bias stress | 최창환 |
2012-06 | Plasma atomic layer deposited TiN metal gate for three dimensional device applications: Deposition temperature, capping metal and post annealing | 최창환 |
2016-11 | The Post Annealing to Control the Number of Layers of 2D MoS2 and SnS2 | 최창환 |
2020-01 | Rapid thermal annealing on the atomic layer-deposited zirconia thin film to enhance resistive switching characteristics | 최창환 |
2012-10 | Remote NH3 plasma passivation on the interface between the remote plasma Al2O3 atomic layer deposited and 6H SiC substrate | 최창환 |
2015-11 | Remote plasma atomic layer deposited Al2O3 4H SiC MOS capacitor with remote H-2 plasma passivation and post metallization annealing | 최창환 |
2016-12 | Residue-Free Silver Nano Patterns Fabricated by Reverse Direct Imprinting | 최창환 |
2011-02 | Ruthenium based metals using atomic vapor deposition for gate electrode applications | 최창환 |
2019-05 | Silver-Adapted Diffusive Memristor Based on Organic Nitrogen-Doped Graphene Oxide Quantum Dots (N-GOQDs) for Artificial Biosynapse Applications | 최창환 |
2012-10 | Site-specific synthesis of ZnO nanocrystalline networks via a hydrothermal method | 최창환 |
2012-06 | SnO2 encapsulated TiO2 hollow nanofibers as anode material for lithium ion batteries | 최창환 |
2020-09 | Stabilized and RESET-voltage controlled multi-level switching characteristics in ZrO2-based memristors by inserting a-ZTO interface layer | 최창환 |
2018-08 | Structural engineering of tantalum oxide based memristor and its electrical switching responses using rapid thermal annealing | 최창환 |
2013-11 | Structural, optical and chemical analysis of zinc sulfide thin film deposited by RF-mganetron sputtering and post deposition annealing | 최창환 |
2011-12 | Structure, Raman, and photoluminescence properties of SnO2/MgO core-shell nanowires | 최창환 |
2019-07 | Study of in Situ Silver Migration in Amorphous Boron Nitride CBRAM Device | 최창환 |
2012-09 | A Study of Sputtered TiN Gate Electrode Etching with Various Wet Chemicals and Post Etch Annealing for Complementary Metal-Oxide-Semiconductor Device Integration Applications | 최창환 |
2017-05 | Suppressed charge trapping characteristics of (NH4)(2)S-x passivated GaN MOS device with atomic layer deposited HfAlOx gate dielectric | 최창환 |
2021-02 | Suppressed Stochastic Switching Behavior and Improved Synaptic Functions in an Atomic Switch Embedded with a 2D NbSe2 Material | 최창환 |
2012-02 | Suppressed Thermally Induced Flatband Voltage Instabilities with Binary Noble Metal Gated Metal-Oxide-Semiconductor Capacitors | 최창환 |
2016-10 | Suppression of boron diffusion using carbon co-implantation in DRAM | 최창환 |
2020-07 | Synaptic Characteristics of Amorphous Boron Nitride-Based Memristors on a Highly Doped Silicon Substrate for Neuromorphic Engineering | 최창환 |
2020-10 | Synaptic Characteristics of an Ultrathin Hexagonal Boron Nitride (h‐BN) Diffusive Memristor | 최창환 |
2016-09 | Synthesis of P-Type ZnO Thin Films with Arsenic Doping and Post Annealing | 최창환 |
2019-08 | Tailored nanoplateau and nanochannel structures using solution-processed rutile TiO2 thin films for complementary and bipolar switching characteristics | 최창환 |
2012-01 | Thickness and material dependence of capping layers on flatband voltage (V-FB) and equivalent oxide thickness (EOT) with high-k gate dielectric/metal gate stack for gate-first process applications | 최창환 |