2015-01 | Effect of a Ti capping layer on thermal stability of NiSi formed from Ni thin films deposited by metal organic chemical vapor deposition using a Ni(Pr-i-DAD)(2) precursor | 전형탁 |
2018-04 | Effect of adding an insulator between metal and semiconductor layers on contact resistance | 전형탁 |
2022-01 | The effect of an annealing process on atomic layer deposited TiO2 thin films | 전형탁 |
2022-03 | The effect of an annealing process on atomic layer deposited TiO2 thin films (vol 33, 045705, 2022) | 전형탁 |
2011-07 | The Effect of Annealing Ambient on the Characteristics of an Indium-Gallium-Zinc Oxide Thin Film Transistor | 전형탁 |
2014-09 | Effect of Au interlayer thickness on the structural, electrical, and optical properties of GZO/Au/GZO multilayers | 전형탁 |
2012-12 | Effect of Crystal Structure and Grain Size on Photo-Catalytic Activities of Remote-Plasma Atomic Layer Deposited Titanium Oxide Thin Film | 전형탁 |
2011-01 | Effect of DC Bias on the Plasma Properties in Remote Plasma Atomic Layer Deposition and Its Application to HfO2 Thin Films | 전형탁 |
2021-08 | Effect of H2 annealing on SnS thin films grown by thermal evaporation and their transfer characteristics with Ti, W, and Mo electrodes | 전형탁 |
2022-06 | Effect of Hydrogen Plasma Treatment on Atomic Layer Deposited Silicon Nitride Film | 전형탁 |
2019-04 | Effect of microwave irradiation on the electrical and optical properties of SnO2 thin films | 전형탁 |
2018-08 | Effect of N Concentration Upon Resistive Switching Behavior of Au/Ni/TaON/NiSi ECM Devices | 전형탁 |
2022-05 | The effect of O2 plasma post-treatment on atomic layer deposited TiO2 thin films | 전형탁 |
2016-11 | The effect of ozone concentration during atomic layer deposition on the properties of ZrO2 films for capacitor applications | 전형탁 |
2018-08 | Effect of ozone concentration on atomic layer deposited tin oxide | 전형탁 |
2015-12 | The effect of plasma power on the properties of low-temperature silicon nitride deposited by RPALD for a gate spacer | 전형탁 |
2017-02 | Effect of scan speed on moisture barrier properties of aluminum oxide using spatial atomic layer deposition | 전형탁 |
2020-02 | Effect of single Al2O3 cycle insertion with various positions in SnO2 thin films using atomic layer deposition | 전형탁 |
2011-12 | The effects of a HfO2 buffer layer on Al2O3-passivated indium-gallium-zinc-oxide thin film transistors | 전형탁 |
2012-12 | Effects of a SiO2 buffer layer on the flatband voltage shift of La2O3 gate dielectric grown by using remote plasma atomic layer deposition | 전형탁 |
2012-12 | Effects of Ar plasma treatment for deposition of ruthenium film by remote plasma atomic layer deposition | 전형탁 |
2011-09 | The effects of post-annealing on the performance of ZnO thin film transistors | 전형탁 |
2012-12 | The Effects of Radio Frequency Plasma Power on Al2O3 Films Deposited at Room-Temperature by Remote Plasma Atomic Layer Deposition | 전형탁 |
2014-12 | Electrical behavior of amorphous indium-gallium-zinc oxide thin film transistors by embedding Au nanoparticles in the channel layer | 전형탁 |
2013-03 | Electrical stability enhancement of the amorphous In-Ga-Zn-O thin film transistor by formation of Au nanoparticles on the back-channel surface | 전형탁 |
2015-03 | Endurance improvement due to rapid thermal annealing (RTA) of a TaO (x) thin film in an oxygen ambient | 전형탁 |
2016-06 | Engineering the crystallinity of tin disulfide deposited at low temperatures | 전형탁 |
2014-12 | Epitaxial Growth of Three-Dimensionally Mesostructured Single-Crystalline Cu2O via Templ-ated Electrodeposition | 전형탁 |
2020-05 | Exploration of ZrO 2-shelled nanowires for chemiresistive detection of NO 2 gas | 전형탁 |
2018-03 | Fabrication of high crystalline SnS and SnS2 thin films, and their switching device characteristics | 전형탁 |