Browsing byAuthor전형탁

Jump to:
All A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
  • Sort by:
  • In order:
  • Results/Page
  • Authors/Record:

Showing results 29 to 58 of 128

Issue DateTitleAuthor(s)
2015-01Effect of a Ti capping layer on thermal stability of NiSi formed from Ni thin films deposited by metal organic chemical vapor deposition using a Ni(Pr-i-DAD)(2) precursor전형탁
2018-04Effect of adding an insulator between metal and semiconductor layers on contact resistance전형탁
2022-01The effect of an annealing process on atomic layer deposited TiO2 thin films전형탁
2022-03The effect of an annealing process on atomic layer deposited TiO2 thin films (vol 33, 045705, 2022)전형탁
2011-07The Effect of Annealing Ambient on the Characteristics of an Indium-Gallium-Zinc Oxide Thin Film Transistor전형탁
2014-09Effect of Au interlayer thickness on the structural, electrical, and optical properties of GZO/Au/GZO multilayers전형탁
2012-12Effect of Crystal Structure and Grain Size on Photo-Catalytic Activities of Remote-Plasma Atomic Layer Deposited Titanium Oxide Thin Film전형탁
2011-01Effect of DC Bias on the Plasma Properties in Remote Plasma Atomic Layer Deposition and Its Application to HfO2 Thin Films전형탁
2021-08Effect of H2 annealing on SnS thin films grown by thermal evaporation and their transfer characteristics with Ti, W, and Mo electrodes전형탁
2022-06Effect of Hydrogen Plasma Treatment on Atomic Layer Deposited Silicon Nitride Film전형탁
2019-04Effect of microwave irradiation on the electrical and optical properties of SnO2 thin films전형탁
2018-08Effect of N Concentration Upon Resistive Switching Behavior of Au/Ni/TaON/NiSi ECM Devices전형탁
2022-05The effect of O2 plasma post-treatment on atomic layer deposited TiO2 thin films전형탁
2016-11The effect of ozone concentration during atomic layer deposition on the properties of ZrO2 films for capacitor applications전형탁
2018-08Effect of ozone concentration on atomic layer deposited tin oxide전형탁
2015-12The effect of plasma power on the properties of low-temperature silicon nitride deposited by RPALD for a gate spacer전형탁
2017-02Effect of scan speed on moisture barrier properties of aluminum oxide using spatial atomic layer deposition전형탁
2020-02Effect of single Al2O3 cycle insertion with various positions in SnO2 thin films using atomic layer deposition전형탁
2011-12The effects of a HfO2 buffer layer on Al2O3-passivated indium-gallium-zinc-oxide thin film transistors전형탁
2012-12Effects of a SiO2 buffer layer on the flatband voltage shift of La2O3 gate dielectric grown by using remote plasma atomic layer deposition전형탁
2012-12Effects of Ar plasma treatment for deposition of ruthenium film by remote plasma atomic layer deposition전형탁
2011-09The effects of post-annealing on the performance of ZnO thin film transistors전형탁
2012-12The Effects of Radio Frequency Plasma Power on Al2O3 Films Deposited at Room-Temperature by Remote Plasma Atomic Layer Deposition전형탁
2014-12Electrical behavior of amorphous indium-gallium-zinc oxide thin film transistors by embedding Au nanoparticles in the channel layer전형탁
2013-03Electrical stability enhancement of the amorphous In-Ga-Zn-O thin film transistor by formation of Au nanoparticles on the back-channel surface전형탁
2015-03Endurance improvement due to rapid thermal annealing (RTA) of a TaO (x) thin film in an oxygen ambient전형탁
2016-06Engineering the crystallinity of tin disulfide deposited at low temperatures전형탁
2014-12Epitaxial Growth of Three-Dimensionally Mesostructured Single-Crystalline Cu2O via Templ-ated Electrodeposition전형탁
2020-05Exploration of ZrO 2-shelled nanowires for chemiresistive detection of NO 2 gas전형탁
2018-03Fabrication of high crystalline SnS and SnS2 thin films, and their switching device characteristics전형탁

BROWSE