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Showing results 1 to 30 of 200

Issue DateTitleAuthor(s)
2001-021.55㎛ InGaAsP/InGaAsP MQW 광흡수 변조기에서 구조변수가 소광특성에 미치는 영향심종인
2000-091.55㎛ InGaAsP/InGaAsP 다중양자우물 구조전계흡수형 광변조기에서 캐리어 수송현상이 소광특성에 미치는 영향심종인
2001-111.55㎛ MQW EA-Modulator의 구조변수가 소광특성 및 chirp 에 미치는 영향심종인
2001-071.5㎛ Wavelength Distributed Reflector Lasers with Vertical Grating심종인
2006-07A 10-Gb/s planar InGaAs/InP avalanche photodiode with a thin multiplication layer fabricated by using recess-etching and single-diffusion processes심종인
2004-0810Gb/s XFP Transceiver용 Transmitter Optical Sub-assembly(TOSA)의 RF설계/제작 및 주파수 특성 해석심종인
2007-043차원 회로 모델링을 이용한 청색 GaN/InGaN LED의 전류 확산 효과에 관한 연구심종인
2007-043차원의 회로 모델링을 이용한 청색 GaN/InGaN LED의 전류 확산 효과에 관한 연구심종인
2003-11A compact multilayer IC package model for efficient simulation, analysis, and design of high-performance VLSI circuits심종인
1996-10A computational method of determining reflectance at abrupt waveguide interfaces심종인
2004-09A decoupling technique for efficient timing analysis of VLSI interconnects with dynam.ic circuit switching심종인
2005-10A measurement method of the resonantly enhanced gain spectrum and its effect on second harmonic generation in Vertical-External-Cavity Surface-Emitting Laser (VECSEL)심종인
2008-05A method for current spreading analysis and electrode pattern design in light-emitting diodes심종인
2007-08A new method for measurement of the fundamental device parameters in a GaN-based light emitting diode심종인
2007-02A simple method for measurement of the alpha-factor in semiconductor Fabry-Perot lasers operating above threshold심종인
2002-06A traveling-wave-based waveform approximation technique for the timing verification of single transmission lines심종인
2011-04An Explanation of Efficiency Droop in InGaN-based Light Emitting Diodes: Saturated Radiative Recombination Rate at Randomly Distributed In-Rich Active Areas심종인
2003-12Analog Characterization of Low-Voltage MQW Traveling-Wave Electroabsorption Modulators심종인
2017-04Analysis of carrier recombination dynamics in InGaN-based light-emitting diodes by differential carrier lifetime measurement심종인
2021-03Analysis of degradation mechanisms in GaN-based light-emitting diodes under reverse-bias stress: effects of defects and junction-temperature increase심종인
2014-03Analysis of dominant carrier recombination mechanisms depending on injection current in InGaN green light emitting diodes심종인
2015-02Analysis of efficiency droop in 280-nm AlGaN multiple-quantum-well light-emitting diodes based on carrier rate equation심종인
2012-03Analysis of efficiency droop in nitride light-emitting diodes by the reduced effective volume of InGaN active material심종인
2015-02Analysis of nonradiative recombination mechanisms and their impacts on the device performance of InGaN/GaN light-emitting diodes심종인
2016-01Analysis of the characteristics with increasing the number of QWs for near-ultraviolet LEDs심종인
2010-06Analysis of the stress distribution in the nonuniformly bent GaN thin film grown on a sapphire substrate심종인
2010-11Analysis of Time-resolved Photoluminescence of InGaN Quantum Wells Using the Carrier Rate Equation심종인
2021-08Analysis of transient degradation behaviors of organic light-emitting diodes under electrical stress심종인
2004-03Analytical Dynamic Time Delay Model of Strongly Coupled RLC Interconnect Lines Dependent on Switching심종인
2008-08An Analytical Model of the Intracavity Optical Second Harmonic Generation in a Vertical-External-Cavity Surface-Emitting Laser심종인

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