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Showing results 62 to 79 of 79

Issue DateTitleAuthor(s)
2014-01Physical modeling of program and erase speeds of metal-oxide-nitride-oxide-silicon cells with three-dimensional gate-all-around architecture송윤흡
2016-11Poly-GaAs 채널을 갖는 3D NAND flash memory 전기적 특성 연구송윤흡
2014-09Programming Characteristics on Three-Dimensional NAND Flash Structure Using Edge Fringing Field Effect송윤흡
2017-01Reliability of magnetic tunnel junctions with a spinel MgAl2O4 film송윤흡
2013-04Research of Bulk Erase Operation in Vertical Three-Dimensional Cell Array Architecture송윤흡
2014-09Retention characteristics of gate-all-around metal-oxide-nitride-oxide-semiconductor devices for the trap energy level dependence at elevated temperature송윤흡
2017-06Simulation of Residual Stress and Its Impact on a Poly-Silicon Channel for Three-Dimensional, Stacked, Vertical-NAND Flash Memories송윤흡
2013-08Statistical Characterization of Noise and Interference in NAND Flash Memory송윤흡
2017-02Stochastic macromodel of magnetic tunnel junction resistance variation and critical current dependence on resistance variation for SPICE simulation송윤흡
2014-06STT-MRAM의 새로운 자기 기준 감지 회로송윤흡
2017-10TDDB modeling depending on interfacial conditions in magnetic tunnel junctions송윤흡
2017-04Temperature Dependence According to Grain Boundary Potential Barrier Variation in Vertical NAND Flash Cell with Polycrystalline-Silicon Channel송윤흡
2016-06Temperature dependence of reliability characteristics for magnetic tunnel junctions with a thin MgO dielectric film송윤흡
2015-04Thickness and temperature dependences of the degradation and the breakdown for MgO-based magnetic tunnel junctions송윤흡
2017-02Time-dependent dielectric breakdown of MgO magnetic tunnel junctions and novel test method송윤흡
2017-03Uniformly strained AlGaSb/InGaSb/AlGaSb quantum well on GaAs substrates for balanced complementary metal-oxide-semiconductors송윤흡
2018-12Vertical Channel NAND Flash Structure using DSCG(Double-Side-Control-Gate) to Reduce Cell to Cell Interference송윤흡
2014-06전세포 커패시턴스 감지법을 이용한 암 진단 바이오센서송윤흡

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