| 2014-10 | A capacitive biosensor using buried electrodes for the discrimination of whole-cells | 송윤흡 |
| 2012-06 | Cell characteristics of FePt nano-dot memories with a high-k Al2O3 blocking oxide | 송윤흡 |
| 2019-04 | Comparative Study on Performance of IGZO Transistors With Sputtered and Atomic Layer Deposited Channel Layer | 송윤흡 |
| 2018-04 | Contact resistance change memory using N-doped Cr2Ge2Te6 phase-change material showing non-bulk resistance change | 송윤흡 |
| 2016-06 | Contact resistivity of amorphous and crystalline GeCu2Te3 to W electrode for phase change random access memory | 송윤흡 |
| 2016-01 | Degradation Characteristics of MgO Based Magnetic Tunnel Junction Caused by Surface Roughness of Ta/Ru Buffer Layers | 송윤흡 |
| 2017-10 | Design and Fabrication of Capacitive Silicon Nanomechanical Resonators with Selective Vibration of a High-Order Mode | 송윤흡 |
| 2019-10 | Design of FPGA-Based LZ77 Compressor With Runtime Configurable Compression Ratio and Throughput | 송윤흡 |
| 2017-10 | A Dummy Cell Added Neural Network Using in Pattern Recognition for Prevention of Failed Events | 송윤흡 |
| 2014-04 | Effect of an Interface Mg Insertion Layer on the Reliability of a Magnetic Tunnel Junction based on a Co2FeAl Full-Heusler Alloy | 송윤흡 |
| 2018-08 | The Effect of Mechanical Stress on Cell Characteristics in MONOS Structures | 송윤흡 |
| 2016-03 | Effect of Mg insertion on stress-induced resistance drift in MgO-based magnetic tunnel junctions | 송윤흡 |
| 2016-06 | Effect of Mg insertion on time-dependent dielectric breakdown in MgO-based magnetic tunnel junctions | 송윤흡 |
| 2014-01 | Effect of the trap level of the silicon nitride layer on the retention characteristics of GAA-MONOS charge trap memories at elevated temperature | 송윤흡 |
| 2019-02 | The Effect of Tungsten Volume on Residual Stress and Cell Characteristics in MONOS | 송윤흡 |
| 2017-08 | Endurance of magnetic tunnel junctions under dynamic voltage stress | 송윤흡 |
| 2017-05 | Fabrication and evaluation of capacitive silicon resonators with piezoresistive heat engines | 송윤흡 |
| 2016-04 | Fabrication of Vacuum-Sealed Capacitive Micromachined Ultrasonic Transducer Arrays Using Glass Reflow Process | 송윤흡 |
| 2017-07 | GaSb/InGaAs 2-dimensional hole gas grown on InP substrate for III-V CMOS applications | 송윤흡 |
| 2020-11 | High Hole Mobility and Low Leakage Thin-Body (In)GaSb p-MOSFETs Grown on High-Bandgap AlGaSb | 송윤흡 |
| 2018-08 | High hole mobility in strained In0.25Ga0.75Sb quantum well with high quality Al0.95Ga0.05Sb buffer layer | 송윤흡 |
| 2020-11 | High-Performance Thin-Film Transistors with an Atomic-Layer-Deposited Indium Gallium Oxide Channel: A Cation Combinatorial Approach | 송윤흡 |
| 2016-10 | Impact of contact resistance on memory window in phase-change random access memory (PCRAM) | 송윤흡 |
| 2018-09 | Impact of etch angles on cell characteristics in 3D NAND flash memory | 송윤흡 |
| 2017-12 | Impact of Grain Length and Grain Boundary on Dispersion of Threshold Voltage for 3-Dimensional Gate-All-Around Polysilicon Channel Memory | 송윤흡 |
| 2018-01 | Inverse Resistance Change Cr2Ge2Te6-Based PCRAM Enabling Ultralow-Energy Amorphization | 송윤흡 |
| 2013-05 | Investigation of a selective switching device using a phase-change material for a 3-dimensional PCRAM array | 송윤흡 |
| 2013-05 | Investigation of a selective switching device using a phase-change material for a 3-dimensional PCRAM array | 송윤흡 |
| 2016-08 | Investigation of an erasing method for synaptic behaviour in a phase change device using Ge1Cu2Te3 (GCT) | 송윤흡 |
| 2018-03 | Investigation of bias polarity dependence of set operation in GeCu2Te3 phase change memory | 송윤흡 |
