| 2018-09 | Impact of etch angles on cell characteristics in 3D NAND flash memory | 송윤흡 |
| 2017-12 | Impact of Grain Length and Grain Boundary on Dispersion of Threshold Voltage for 3-Dimensional Gate-All-Around Polysilicon Channel Memory | 송윤흡 |
| 2018-01 | Inverse Resistance Change Cr2Ge2Te6-Based PCRAM Enabling Ultralow-Energy Amorphization | 송윤흡 |
| 2013-05 | Investigation of a selective switching device using a phase-change material for a 3-dimensional PCRAM array | 송윤흡 |
| 2013-05 | Investigation of a selective switching device using a phase-change material for a 3-dimensional PCRAM array | 송윤흡 |
| 2016-08 | Investigation of an erasing method for synaptic behaviour in a phase change device using Ge1Cu2Te3 (GCT) | 송윤흡 |
| 2018-03 | Investigation of bias polarity dependence of set operation in GeCu2Te3 phase change memory | 송윤흡 |
| 2015-03 | Investigation of in-situ doping profile for N plus /P/N plus bidirectional switching device using Si1-xGex/Si/Si1-xGex structure | 송윤흡 |
| 2014-11 | Investigation of In-situ Doping Profile for N+/P/N+ Bidirectional Switching Device using Si1-xGex/Si/Si1-xGex Structure | 송윤흡 |
| 2018-01 | Investigation of ramped voltage stress to screen defective magnetic tunnel junctions | 송윤흡 |
| 2017-05 | Investigation of the Effect of Grain for Vertically Stacked NAND Flash Memory with a Poly-GaAs Channel | 송윤흡 |
| 2019-04 | Investigation of the Impact of External Stress on Memory Characteristics by Modifying the Backside of Substrate | 송윤흡 |
| 2012-10 | Investigation of Vertical Channel Architecture for Bulk Erase Operation in Three-Dimensional NAND Flash Memory | 송윤흡 |
| 2015-03 | Macro model for stochastic behavior of resistance distribution of magnetic tunnel junction | 송윤흡 |
| 2014-06 | Magnetic Tunnel Junction의 저항 산포 및 Sense Margin 분석 | 송윤흡 |
| 2017-07 | Mechanical Stress Distribution and the Effects of Process Parameter Changes in Vertical NAND Flash Memory | 송윤흡 |
| 2016-05 | Memory characteristics of capacitors with poly-GaAs floating gates | 송윤흡 |
| 2020-11 | Memory Characteristics of Capacitors with Poly-GaP Floating Gates | 송윤흡 |
| 2016-08 | Modeling of data retention statistics of phase-change memory with confined- and mushroom-type cells | 송윤흡 |
| 2014-06 | MTJ 버퍼층의 Ta/Ru 층의 두께 및 공정 온도 조건에 따른 Roughness에 대한 연구 | 송윤흡 |
| 2011-09 | Multilevel Charge Storage in a Multiple Alloy Nanodot Memory | 송윤흡 |
| 2014-03 | Multiple phase change structure for the scalable phase change random access memory array | 송윤흡 |
| 2012-10 | Multiresistance Characteristics of PCRAM With Ge1Cu2Te3 and Ge2Sb2Te5 Films | 송윤흡 |
| 2020-10 | A New Read Scheme for Alleviating Cell-to-Cell Interference in Scaled-Down 3D NAND Flash Memory | 송윤흡 |
| 2015-09 | Novel device structure for phase change memory toward low-current operation | 송윤흡 |
| 2016-02 | Novel Self-Reference Sense Amplifier for Spin-Transfer-Torque Magneto-Resistive Random Access Memory | 송윤흡 |
| 2012-02 | A novel sensing algorithm for Spin-Transfer-Torque magnetic RAM (STT-MRAM) by utilizing dynamic reference | 송윤흡 |
| 2020-12 | A Novel Structure and Operation Scheme of Vertical Channel NAND Flash with Ferroelectric Memory for Multi String Operations | 송윤흡 |
| 2019-11 | A Novel Structure for Improving Erase Performance of Vertical Channel NAND Flash With an Indium-Gallium-Zinc-Oxide Channel | 송윤흡 |
| 2019-02 | A novel three-dimensional NAND flash structure for improving the erase performance | 송윤흡 |
