Full metadata record
DC Field | Value | Language |
---|---|---|
dc.contributor.author | 오혜근 | - |
dc.date.accessioned | 2019-01-09T07:45:17Z | - |
dc.date.available | 2019-01-09T07:45:17Z | - |
dc.date.issued | 2018-05 | - |
dc.identifier.citation | JAPANESE JOURNAL OF APPLIED PHYSICS, v. 57, No. 6, Article no. 06HA01 | en_US |
dc.identifier.issn | 0021-4922 | - |
dc.identifier.uri | http://iopscience.iop.org/article/10.7567/JJAP.57.06HA01/meta | - |
dc.identifier.uri | https://repository.hanyang.ac.kr/handle/20.500.11754/81195 | - |
dc.description.abstract | Thermal and structural deformation of extreme-ultraviolet lithography (EUVL) masks during the exposure process may become important issues as these masks are subject to rigorous image placement and flatness requirements. The reflective masks used for EUVL absorb energy during exposure, and the temperature of the masks rises as a result. This can cause thermomechanical deformation that can reduce the pattern quality. The use of very thick low-thermal-expansion substrate materials (LTEMs) may reduce energy absorption, but they do not completely eliminate mask deformation. Therefore, it is necessary to predict and optimize the effects of energy transferred from the extreme-ultraviolet (EUV) light source and the resultant patterns of structured EUV masks with complex multilayers. Our study shows that heat accumulates in the masks as exposure progresses. It has been found that a higher absorber ratio (pattern density) applied to the patterning of EUV masks exacerbates the problem, especially in masks with more complex patterns. (C) 2018 The Japan Society of Applied Physics. | en_US |
dc.description.sponsorship | This work was supported by the Future Semiconductor Device Technology Development Program #10052714 funded by MOTIE (Ministry of Trade, Industry & Energy) and KSRC (Korea Semiconductor Research Consortium). | en_US |
dc.language.iso | en_US | en_US |
dc.publisher | IOP PUBLISHING LTD | en_US |
dc.subject | EUV LITHOGRAPHY | en_US |
dc.subject | INPLANE DISTORTION | en_US |
dc.subject | PATTERN DENSITY | en_US |
dc.subject | EXPOSURE | en_US |
dc.subject | PERFORMANCE | en_US |
dc.subject | RETICLES | en_US |
dc.title | modeling of thermomechanical changes of euv mask and their dependence on absorber variation | en_US |
dc.type | Article | en_US |
dc.identifier.doi | 10.7567/JJAP.57.06HA01 | - |
dc.relation.page | 601-610 | - |
dc.relation.journal | JAPANESE JOURNAL OF APPLIED PHYSICS | - |
dc.contributor.googleauthor | Ban, Chung-Hyun | - |
dc.contributor.googleauthor | Park, Eun-Sang | - |
dc.contributor.googleauthor | Park, Jae-Hun | - |
dc.contributor.googleauthor | Oh, Hye-Keun | - |
dc.relation.code | 2018000917 | - |
dc.sector.campus | E | - |
dc.sector.daehak | COLLEGE OF SCIENCE AND CONVERGENCE TECHNOLOGY[E] | - |
dc.sector.department | DEPARTMENT OF APPLIED PHYSICS | - |
dc.identifier.pid | hyekeun | - |
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