Spalling of Thin Si Layer via Electroless and Electrodeposit-Assisted Stripping (E2AS) with All-Wet Process for Fabrication of Low-Cost Flexible Single-Crystalline Si Solar Cell

Title
Spalling of Thin Si Layer via Electroless and Electrodeposit-Assisted Stripping (E2AS) with All-Wet Process for Fabrication of Low-Cost Flexible Single-Crystalline Si Solar Cell
Author
이정호
Keywords
SILICON; FILMS; ACTIVATION; DEPOSITION; EFFICIENCY; STRESS; electrodeposition; solar cell; thin Si layer
Issue Date
2018-04
Publisher
ELECTROCHEMICAL SOC INC
Citation
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, v. 165, No. 5, Page. D243-D249
Abstract
A novel method using an all-wet process to reduce the cost of material in Si-based devices is described, called the electroless and electrodeposit-assisted stripping (E(2)AS) process. In this approach, a highly adhesive electroless Ni nanorod seed layer is formed on the Si substrate in place of a conventional high-cost physical vapor deposition (PVD) process. Then, a highly stressed Ni film is electrodeposited as the stress layer for lift-off of the Si thin film. Using the E2AS method, a thin Si film can be repetitively detached from a Si substrate without kerf loss, reducing the solar cell manufacturing cost. (C) 2018 The Electrochemical Society.
URI
http://jes.ecsdl.org/content/165/5/D243.shorthttp://repository.hanyang.ac.kr/handle/20.500.11754/80997
ISSN
0013-4651
DOI
10.1149/2.1341805jes
Appears in Collections:
COLLEGE OF ENGINEERING SCIENCES[E](공학대학) > MATERIALS SCIENCE AND CHEMICAL ENGINEERING(재료화학공학과) > Articles
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