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Shot Noise Suppression in SiGe Resonant Interband Tunneling Diodes

Title
Shot Noise Suppression in SiGe Resonant Interband Tunneling Diodes
Author
정희준
Keywords
SiGe; RITD; shot noise; coherent transport
Issue Date
2008-12
Publisher
INST PURE APPLIED PHYSICS
Citation
JAPANESE JOURNAL OF APPLIED PHYSICS, v. 47, No. 12, Page. 8752-8755
Abstract
We report experimental noise studies of SiGe resonant interband tunneling diodes (RITDs) to probe the tunneling transport properties. The shot noise measurements show the signatures of coherent transport not only in the positive differential resistance (PDR) region but also in the plateau-like region on the negative differential resistance (NDR) side of the current-voltage (1-V) trace. The experimentally extracted Fano factor F < 0.5 may suggest that the coherent transport gradually becomes obvious in the NDR region. The variation of the Fano factor through the resonance process is discussed according to the recent theoretical model of coherent tunneling. [DOI: 10.1143/JJAP.47.8752]
URI
http://iopscience.iop.org/article/10.1143/JJAP.47.8752/metahttp://repository.hanyang.ac.kr/handle/20.500.11754/80833
ISSN
0021-4922
DOI
10.1143/JJAP.47.8752
Appears in Collections:
COLLEGE OF SCIENCE AND CONVERGENCE TECHNOLOGY[E](과학기술융합대학) > APPLIED PHYSICS(응용물리학과) > Articles
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