Shot Noise Suppression in SiGe Resonant Interband Tunneling Diodes
- Title
- Shot Noise Suppression in SiGe Resonant Interband Tunneling Diodes
- Author
- 정희준
- Keywords
- SiGe; RITD; shot noise; coherent transport
- Issue Date
- 2008-12
- Publisher
- INST PURE APPLIED PHYSICS
- Citation
- JAPANESE JOURNAL OF APPLIED PHYSICS, v. 47, No. 12, Page. 8752-8755
- Abstract
- We report experimental noise studies of SiGe resonant interband tunneling diodes (RITDs) to probe the tunneling transport properties. The shot noise measurements show the signatures of coherent transport not only in the positive differential resistance (PDR) region but also in the plateau-like region on the negative differential resistance (NDR) side of the current-voltage (1-V) trace. The experimentally extracted Fano factor F < 0.5 may suggest that the coherent transport gradually becomes obvious in the NDR region. The variation of the Fano factor through the resonance process is discussed according to the recent theoretical model of coherent tunneling. [DOI: 10.1143/JJAP.47.8752]
- URI
- http://iopscience.iop.org/article/10.1143/JJAP.47.8752/metahttps://repository.hanyang.ac.kr/handle/20.500.11754/80833
- ISSN
- 0021-4922
- DOI
- 10.1143/JJAP.47.8752
- Appears in Collections:
- COLLEGE OF SCIENCE AND CONVERGENCE TECHNOLOGY[E](과학기술융합대학) > APPLIED PHYSICS(응용물리학과) > Articles
- Files in This Item:
There are no files associated with this item.
- Export
- RIS (EndNote)
- XLS (Excel)
- XML