91 0

Full metadata record

DC FieldValueLanguage
dc.contributor.author오혜근-
dc.date.accessioned2018-12-06T02:20:23Z-
dc.date.available2018-12-06T02:20:23Z-
dc.date.issued2008-11-
dc.identifier.citationJOURNAL OF THE KOREAN PHYSICAL SOCIETY, v. 53, No. 5, Page. 2682-2687en_US
dc.identifier.issn0374-4884-
dc.identifier.urihttp://www.jkps.or.kr/journal/view.html?volume=53&number=9(5)&spage=2682&year=2008-
dc.identifier.urihttp://repository.hanyang.ac.kr/handle/20.500.11754/80748-
dc.description.abstractFor below 32-nm pattern formation, the extreme ultraviolet (EUV) and high-index fluid-based immersion ArF lithography are still under development and it is questionable whether they will be ready to timely meet resolution needs of most aggressive memory designs. Extending technology, such as resist reflow technology, appears to be a bridge option calling for serious consideration. Hence, a physical and mechanical understanding of thermal reflow is required for its better implementation and application. In this paper, resist flow is described by using a two-dimensional time-dependent Navier-Stokes equation with the mass conservation equation, which is composed of the flow of the resist, the variation of the viscosity, the reflow temperature and the reflow time. Due to an approximation based on experiment results, numerical solutions of this equation are described and the simulation results of these solutions are compared to experiment results for a contact hole pattern. In the virtual world, these simulations can predict the phenomenon of thermal reflow, such as the effects of temperature and pitch size on the contact hole patterns, with the appropriate correspondence between these mechanical parameters and the thermal reflow parameters.en_US
dc.description.sponsorshipAuthors thank Kiyoshi Minemura in Aichi University of Technology and Tomomi Uchiyama in Nagoya University, Japan for their helpful researches. This research was supported by the MIC(Ministry of Information and Communication), Korea, under the ITRC (Information Technology Research Center) support program supervised by the IITA(Institute of Information Technology Advancement) (IITA-2008-C109008010030).en_US
dc.language.isoen_USen_US
dc.publisherKOREAN PHYSICAL SOCen_US
dc.subjectLithographyen_US
dc.subjectLithography simulationen_US
dc.subjectFinite element methoden_US
dc.subjectThermal reflow processen_US
dc.subjectChemically-amplified resisten_US
dc.titleSolving the Navier-Stokes Equation for Thermal Reflowen_US
dc.typeArticleen_US
dc.identifier.doi10.3938/jkps.53.2682-
dc.relation.journalJOURNAL OF THE KOREAN PHYSICAL SOCIETY-
dc.contributor.googleauthorKim, Sang-Kon-
dc.contributor.googleauthorOh, Hye-Keun-
dc.relation.code2008205987-
dc.sector.campusE-
dc.sector.daehakCOLLEGE OF SCIENCE AND CONVERGENCE TECHNOLOGY[E]-
dc.sector.departmentDEPARTMENT OF APPLIED PHYSICS-
dc.identifier.pidhyekeun-
Appears in Collections:
COLLEGE OF SCIENCE AND CONVERGENCE TECHNOLOGY[E](과학기술융합대학) > APPLIED PHYSICS(응용물리학과) > Articles
Files in This Item:
There are no files associated with this item.
Export
RIS (EndNote)
XLS (Excel)
XML


qrcode

Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.

BROWSE