Full metadata record
DC Field | Value | Language |
---|---|---|
dc.contributor.author | 오혜근 | - |
dc.date.accessioned | 2018-12-06T02:20:23Z | - |
dc.date.available | 2018-12-06T02:20:23Z | - |
dc.date.issued | 2008-11 | - |
dc.identifier.citation | JOURNAL OF THE KOREAN PHYSICAL SOCIETY, v. 53, No. 5, Page. 2682-2687 | en_US |
dc.identifier.issn | 0374-4884 | - |
dc.identifier.uri | http://www.jkps.or.kr/journal/view.html?volume=53&number=9(5)&spage=2682&year=2008 | - |
dc.identifier.uri | https://repository.hanyang.ac.kr/handle/20.500.11754/80748 | - |
dc.description.abstract | For below 32-nm pattern formation, the extreme ultraviolet (EUV) and high-index fluid-based immersion ArF lithography are still under development and it is questionable whether they will be ready to timely meet resolution needs of most aggressive memory designs. Extending technology, such as resist reflow technology, appears to be a bridge option calling for serious consideration. Hence, a physical and mechanical understanding of thermal reflow is required for its better implementation and application. In this paper, resist flow is described by using a two-dimensional time-dependent Navier-Stokes equation with the mass conservation equation, which is composed of the flow of the resist, the variation of the viscosity, the reflow temperature and the reflow time. Due to an approximation based on experiment results, numerical solutions of this equation are described and the simulation results of these solutions are compared to experiment results for a contact hole pattern. In the virtual world, these simulations can predict the phenomenon of thermal reflow, such as the effects of temperature and pitch size on the contact hole patterns, with the appropriate correspondence between these mechanical parameters and the thermal reflow parameters. | en_US |
dc.description.sponsorship | Authors thank Kiyoshi Minemura in Aichi University of Technology and Tomomi Uchiyama in Nagoya University, Japan for their helpful researches. This research was supported by the MIC(Ministry of Information and Communication), Korea, under the ITRC (Information Technology Research Center) support program supervised by the IITA(Institute of Information Technology Advancement) (IITA-2008-C109008010030). | en_US |
dc.language.iso | en_US | en_US |
dc.publisher | KOREAN PHYSICAL SOC | en_US |
dc.subject | Lithography | en_US |
dc.subject | Lithography simulation | en_US |
dc.subject | Finite element method | en_US |
dc.subject | Thermal reflow process | en_US |
dc.subject | Chemically-amplified resist | en_US |
dc.title | Solving the Navier-Stokes Equation for Thermal Reflow | en_US |
dc.type | Article | en_US |
dc.identifier.doi | 10.3938/jkps.53.2682 | - |
dc.relation.journal | JOURNAL OF THE KOREAN PHYSICAL SOCIETY | - |
dc.contributor.googleauthor | Kim, Sang-Kon | - |
dc.contributor.googleauthor | Oh, Hye-Keun | - |
dc.relation.code | 2008205987 | - |
dc.sector.campus | E | - |
dc.sector.daehak | COLLEGE OF SCIENCE AND CONVERGENCE TECHNOLOGY[E] | - |
dc.sector.department | DEPARTMENT OF APPLIED PHYSICS | - |
dc.identifier.pid | hyekeun | - |
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