408 0

Full metadata record

DC FieldValueLanguage
dc.contributor.author오혜근-
dc.date.accessioned2018-12-05T02:32:26Z-
dc.date.available2018-12-05T02:32:26Z-
dc.date.issued2008-11-
dc.identifier.citationJAPANESE JOURNAL OF APPLIED PHYSICS, v. 47, No. 11, Page. 8333-8337en_US
dc.identifier.issn0021-4922-
dc.identifier.urihttp://iopscience.iop.org/article/10.1143/JJAP.47.8333/meta-
dc.identifier.urihttps://repository.hanyang.ac.kr/handle/20.500.11754/80736-
dc.description.abstractPattern reduction has generated much interest in development effective methods of reducing the feature Sizes Of microelectronic and data-storage devices. For below-32-nm node technology, the bottom-up approach, namely, self-assembly, has obstacles Such as the insufficient Support of processes and mass production, and the top-down approaches. namely, photolithography, the extremely ultraviolet (EUV) technique, and high-index fluid-based immersion ArF lithography. are Still under development. As one of the solutions for below-32 nm node technology. double patterning technology (DPT) has been researched. In this paper. we analytically report that the DPT pattern is 3/2 times denser than the double exposure technology (DET) pattern. and three times denser than the single-exposure pattern. An algorithm of the inverse lithography technology (ILT) based oil not mathematical functions but pixels and the lithography model is described and simulated. An algorithm of the DPT mask design with ILT is described in terms of how to use this ILT method in an integrated Computational lithography platform to handle the DPT. For its accuracy, its simulation results are compared with the simulation results obtained Without ILT and with the conventional serif optical proximity correction (OPC). The ILT results are better than other results. Hence, the ILT based on pixels and the lithography model and its application algorithm of DIPT call reduce the design complexity of mask design and the cost of production of DPT for below 32 run half pitch pattern generation.en_US
dc.description.sponsorshipThis research was supported by the Ministry of Information and Communication (MIC), Korea, under the Information Technology Research Center (ITRC) support program supervised by the Institute of Information Technology Advancement (IITA) (IITA-2008-C109008010030).en_US
dc.language.isoen_USen_US
dc.publisherINST PURE APPLIED PHYSICSen_US
dc.subjectlithographyen_US
dc.subjectlithography simulationen_US
dc.subjectdouble patterningen_US
dc.subjectinverse lithographyen_US
dc.subjectOPTICAL LITHOGRAPHYen_US
dc.titleA mask generation approach to double patterning technology with inverse lithographyen_US
dc.typeArticleen_US
dc.identifier.doi10.1143/JJAP.47.8333-
dc.relation.journalJAPANESE JOURNAL OF APPLIED PHYSICS-
dc.contributor.googleauthorKim, Sang-Kon-
dc.contributor.googleauthorOh, Hye-Keun-
dc.contributor.googleauthorJung, Young-Dae-
dc.contributor.googleauthorAn, Ilsin-
dc.relation.code2011217131-
dc.sector.campusE-
dc.sector.daehakCOLLEGE OF SCIENCE AND CONVERGENCE TECHNOLOGY[E]-
dc.sector.departmentDEPARTMENT OF APPLIED PHYSICS-
dc.identifier.pidhyekeun-
Appears in Collections:
COLLEGE OF SCIENCE AND CONVERGENCE TECHNOLOGY[E](과학기술융합대학) > APPLIED PHYSICS(응용물리학과) > Articles
Files in This Item:
There are no files associated with this item.
Export
RIS (EndNote)
XLS (Excel)
XML


qrcode

Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.

BROWSE