Full metadata record
DC Field | Value | Language |
---|---|---|
dc.contributor.author | 방진호 | - |
dc.date.accessioned | 2018-11-22T05:36:11Z | - |
dc.date.available | 2018-11-22T05:36:11Z | - |
dc.date.issued | 2016-09 | - |
dc.identifier.citation | ELECTROCHIMICA ACTA, v. 211, Page. 644-651 | en_US |
dc.identifier.issn | 0013-4686 | - |
dc.identifier.issn | 1873-3859 | - |
dc.identifier.uri | https://linkinghub.elsevier.com/retrieve/pii/S0013468616313913 | - |
dc.identifier.uri | https://repository.hanyang.ac.kr/handle/20.500.11754/80573 | - |
dc.description.abstract | In2S3 is employed as a new passivation layer in PbS quantum dot-based multilayered photoanodes to coalesce the improvement in photocurrent density (J(SC)) and open-circuit voltage. Suppression of detrimental interfacial charge carrier recombination in In2S3/PbS/TiO2 and In2S3/PbS/CdS/TiO2 multilayered photoanodes, attributed to the In2S3 passivation layer, leads to increased V-OC in both photoanodes. In particular, In2S3/PbS/CdS/TiO2 multilayered photoanode exhibited a substantial improvement of similar to 36% (from 3.2 to 4.3%) in power conversion efficiency, which is attributed to significant increase in J(SC) value of similar to 26 mA/cm(2) by enhanced PbS loading and co-sensitizing effect of CdS along with substantially suppressed interfacial recombination. In-depth electrochemical impedance spectroscopic analysis revealed that the resistance against back-transfer of electrons to electrolyte can be subtly modulated by incorporating In2S3 deposition over PbS. Further, this multiple passivation layer turned out to be beneficial for improving photocorrosion of PbS in a polysulfide electrolyte. (C) 2016 Elsevier Ltd. All rights reserved. | en_US |
dc.description.sponsorship | This research was supported by the Human Resources Development program (No. 20154030200680) of the Korea Institute of Energy Technology Evaluation and Planning (KETEP) grant funded by the Korea government MOTIE (Ministry of Trade, Industry & Energy), and by the MOTIE (No. 10053098) and KSRC (Korea Semiconductor Research Consortium) support program for the development of the future semiconductor device. This research was also supported by the grant from the Basic Science Research Program through the National Research Foundation of Korea (NRF) funded by the Ministry of Science, ICT, and Future Planning (NRF-2016R1A1A1A05005038, 2008-0061891). | en_US |
dc.language.iso | en | en_US |
dc.publisher | PERGAMON-ELSEVIER SCIENCE LTD | en_US |
dc.subject | QDSSCs | en_US |
dc.subject | Interfacial recombination barrier | en_US |
dc.subject | multilayered photoanode | en_US |
dc.subject | SILAR | en_US |
dc.title | Strategic PbS quantum dot-based multilayered photoanodes for high efficiency quantum dot-sensitized solar cells | en_US |
dc.type | Article | en_US |
dc.relation.volume | 211 | - |
dc.identifier.doi | 10.1016/j.electacta.2016.06.075 | - |
dc.relation.page | 644-651 | - |
dc.relation.journal | ELECTROCHIMICA ACTA | - |
dc.contributor.googleauthor | Basit, Muhammad Abdul | - |
dc.contributor.googleauthor | Abbas, Muhammad Awais | - |
dc.contributor.googleauthor | Jung, Eun Sun | - |
dc.contributor.googleauthor | Park, Young Min | - |
dc.contributor.googleauthor | Bang, Jin Ho | - |
dc.contributor.googleauthor | Park, Tae Joo | - |
dc.relation.code | 2016000116 | - |
dc.sector.campus | S | - |
dc.sector.daehak | GRADUATE SCHOOL[S] | - |
dc.sector.department | DEPARTMENT OF BIONANOTECHNOLOGY | - |
dc.identifier.pid | jbang | - |
dc.identifier.researcherID | A-4850-2016 | - |
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