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Characteristics of Negative Electron Beam Resists, ma-N2410 and ma-N2405

Title
Characteristics of Negative Electron Beam Resists, ma-N2410 and ma-N2405
Author
정희준
Keywords
negative resist; electron beam lithography; proximity effect; crosslink; contrast; LITHOGRAPHY
Issue Date
2008-03
Publisher
ELSEVIER SCIENCE BV
Citation
MICROELECTRONIC ENGINEERING, v. 85, No. 3, Page. 582-586
Abstract
We have characterized the electron beam lithography (EBL) properties of the new negative tone resists, ma-N2410 and ma-N2405. 2 These negative resists reacts under low electron dose values from 10 to 140 mu C/cm(2), tested using 10, 20, 28 keV electron beam. There was negligible loss of pattern height, which was attributed to the combined dose of the incident electron beam and the backscattered electrons. Experimental tests were performed under various EBL writing conditions of dose value, developing time, line-width and resist thickness. Our investigation showed that these new commercially available resists have high resolution and high contrast with non-chemical amplification, useful for micro-fabrication application. (c) 2007 Elsevier B.V. All rights reserved.
URI
https://www.sciencedirect.com/science/article/pii/S016793170700696X?via%3Dihubhttp://repository.hanyang.ac.kr/handle/20.500.11754/80253
ISSN
0167-9317
DOI
10.1016/j.mee.2007.10.005
Appears in Collections:
COLLEGE OF SCIENCE AND CONVERGENCE TECHNOLOGY[E](과학기술융합대학) > APPLIED PHYSICS(응용물리학과) > Articles
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