Full metadata record
DC Field | Value | Language |
---|---|---|
dc.contributor.author | 박진성 | - |
dc.date.accessioned | 2018-10-29T06:37:07Z | - |
dc.date.available | 2018-10-29T06:37:07Z | - |
dc.date.issued | 2016-09 | - |
dc.identifier.citation | APPLIED PHYSICS LETTERS, v. 109, NO. 12, Page. 121604-121609 | en_US |
dc.identifier.issn | 0003-6951 | - |
dc.identifier.issn | 1077-3118 | - |
dc.identifier.uri | https://aip.scitation.org/doi/10.1063/1.4963265 | - |
dc.identifier.uri | https://repository.hanyang.ac.kr/handle/20.500.11754/76830 | - |
dc.description.abstract | Antireflective conducting indium oxide layers were deposited using atomic layer deposition on a transparent nanostructured substrate grown using colloidal lithography. In order to explain the changes in the electrical resistivity and the optical transmittance of conducting indium oxide layers depending on various aspect ratios of the nanostructured substrates, we investigated the surface area and refractive index of the indium oxide layers in the film depth direction as a function of aspect ratio. The conformal indium oxide layer on a transparent nanostructured substrate with optimized geometry exhibited transmittance of 88% and resistivity of 7.32 x 10(-4) Omega cm. The enhancement of electrical resistivity is strongly correlated with the surface area of the indium oxide layer depending on the aspect ratio of the nanostructured substrates. In addition, the improvement in transparency was explained by the gradual changes of the refractive index in the film depth direction according to the aspect ratio of the nanostructures. Published by AIP Publishing. | en_US |
dc.description.sponsorship | This research was partially supported by the Basic Science Research Program through the National Research Foundation of Korea (NRF), funded by the Ministry of Education, Science, and Technology (2016R1A6A1A03012877). This research was also supported by the Korea Institute of Machinery and Materials (Basic Research Program, No. NK196D) and by Samsung Display Co., Ltd. | en_US |
dc.language.iso | en | en_US |
dc.publisher | AMER INST PHYSICS | en_US |
dc.subject | THIN-FILM TRANSISTORS | en_US |
dc.subject | ELECTRICAL-PROPERTIES | en_US |
dc.subject | TRANSPARENT | en_US |
dc.subject | DEPOSITION | en_US |
dc.subject | TEMPERATURE | en_US |
dc.subject | PERFORMANCE | en_US |
dc.title | Anti-reflective conducting indium oxide layer on nanostructured substrate as a function of aspect ratio | en_US |
dc.type | Article | en_US |
dc.relation.no | 12 | - |
dc.relation.volume | 109 | - |
dc.identifier.doi | 10.1063/1.4963265 | - |
dc.relation.page | 121604-121609 | - |
dc.relation.journal | APPLIED PHYSICS LETTERS | - |
dc.contributor.googleauthor | Park, Hyun-Woo | - |
dc.contributor.googleauthor | Ji, Seungmuk | - |
dc.contributor.googleauthor | Lim, Hyuneui | - |
dc.contributor.googleauthor | Choi, Dong-Won | - |
dc.contributor.googleauthor | Park, Jin-Seong | - |
dc.contributor.googleauthor | Chung, Kwun-Bum | - |
dc.relation.code | 2016003157 | - |
dc.sector.campus | S | - |
dc.sector.daehak | COLLEGE OF ENGINEERING[S] | - |
dc.sector.department | DIVISION OF MATERIALS SCIENCE AND ENGINEERING | - |
dc.identifier.pid | jsparklime | - |
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