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Random Si nanopillars for broadband antireflection in crystalline silicon solar cells

Title
Random Si nanopillars for broadband antireflection in crystalline silicon solar cells
Author
정두석
Keywords
crystalline silicon solar cells; light trapping; silicon nanostructrues
Issue Date
2016-08
Publisher
IOP PUBLISHING LTD
Citation
JOURNAL OF PHYSICS D-APPLIED PHYSICS, v. 49, no. 37, page. 1-7
Abstract
We demonstrate the fabrication of shallow Si nanopillar structures at a submicron scale which provides broadband antireflection for crystalline Si (c-Si) solar cells in the wavelength range of 350 nm-1100 nm. The Si random nanopillars were made by reactive ion etch (RIE) processing with thermally dewetted Sn metals as an etch mask. The diameters and coverages of the Si nanopillars were adjusted in a wide range of the nanoscale to microscale by varying the nominal thickness of the Sn metals and subsequent annealing temperatures. The height of the nanopillars was controlled by the RIE process time. The optimal size of the nanopillars, which are 340 nm in diameter and 150 nm in height, leads to the lowest average reflectance of 3.6%. We showed that the power conversion efficiency of the c-Si solar cells could be enhanced with the incorporation of optimally designed Si random nanopillars from 13.3% to 14.0%. The fabrication scheme of the Si nanostructures we propose in this study would be a cost-effective and promising light trapping technique for efficient c-Si solar cells.
URI
http://iopscience.iop.org/article/10.1088/0022-3727/49/37/375108/metahttp://repository.hanyang.ac.kr/handle/20.500.11754/76547
ISSN
0022-3727; 1361-6463
DOI
10.1088/0022-3727/49/37/375108
Appears in Collections:
COLLEGE OF ENGINEERING[S](공과대학) > MATERIALS SCIENCE AND ENGINEERING(신소재공학부) > Articles
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