Full metadata record
DC Field | Value | Language |
---|---|---|
dc.contributor.author | 신동수 | - |
dc.date.accessioned | 2018-10-11T05:22:36Z | - |
dc.date.available | 2018-10-11T05:22:36Z | - |
dc.date.issued | 2016-08 | - |
dc.identifier.citation | APPLIED PHYSICS EXPRESS, v. 9, NO. 8, Page. 10021-10024 | en_US |
dc.identifier.issn | 1882-0778 | - |
dc.identifier.issn | 1882-0786 | - |
dc.identifier.uri | http://iopscience.iop.org/article/10.7567/APEX.9.081002/meta | - |
dc.identifier.uri | https://repository.hanyang.ac.kr/handle/20.500.11754/76460 | - |
dc.description.abstract | Two kinds of InGaN-based light-emitting diodes (LEDs) having different electron concentrations in the n-GaN injection layer are investigated in order to understand the effects of unbalanced carrier injection on LED performance characteristics. Electrical and optical characteristics such as capacitance-voltage, current-voltage, external quantum efficiency, and electroluminescence spectrum are compared and analyzed. It is shown that the unbalanced carrier distribution in multiple quantum wells affects the forward operating voltage since a large disparity of injection rate between electrons and holes can induce a small effective active volume, thus leading to the severe overflow of electrons to the p-(Al)GaN layer in the LED devices. (C) 2016 The Japan Society of Applied Physics | en_US |
dc.language.iso | en | en_US |
dc.publisher | IOP PUBLISHING LTD | en_US |
dc.subject | EFFICIENCY DROOP | en_US |
dc.title | Effects of unbalanced carrier injection on the performance characteristics of InGaN light-emitting diodes | en_US |
dc.type | Article | en_US |
dc.relation.no | 8 | - |
dc.relation.volume | 9 | - |
dc.identifier.doi | 10.7567/APEX.9.081002 | - |
dc.relation.page | 10021-10024 | - |
dc.relation.journal | APPLIED PHYSICS EXPRESS | - |
dc.contributor.googleauthor | Han, Dong-Pyo | - |
dc.contributor.googleauthor | Shim, Jong-In | - |
dc.contributor.googleauthor | Shin, Dong-Soo | - |
dc.contributor.googleauthor | Kim, Kyu-Sang | - |
dc.relation.code | 2016001755 | - |
dc.sector.campus | S | - |
dc.sector.daehak | GRADUATE SCHOOL[S] | - |
dc.sector.department | DEPARTMENT OF BIONANOTECHNOLOGY | - |
dc.identifier.pid | dshin | - |
dc.identifier.orcid | http://orcid.org/0000-0002-0863-9138 | - |
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