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Effects of unbalanced carrier injection on the performance characteristics of InGaN light-emitting diodes

Title
Effects of unbalanced carrier injection on the performance characteristics of InGaN light-emitting diodes
Author
신동수
Keywords
EFFICIENCY DROOP
Issue Date
2016-08
Publisher
IOP PUBLISHING LTD
Citation
APPLIED PHYSICS EXPRESS, v. 9, NO. 8, Page. 10021-10024
Abstract
Two kinds of InGaN-based light-emitting diodes (LEDs) having different electron concentrations in the n-GaN injection layer are investigated in order to understand the effects of unbalanced carrier injection on LED performance characteristics. Electrical and optical characteristics such as capacitance-voltage, current-voltage, external quantum efficiency, and electroluminescence spectrum are compared and analyzed. It is shown that the unbalanced carrier distribution in multiple quantum wells affects the forward operating voltage since a large disparity of injection rate between electrons and holes can induce a small effective active volume, thus leading to the severe overflow of electrons to the p-(Al)GaN layer in the LED devices. (C) 2016 The Japan Society of Applied Physics
URI
http://iopscience.iop.org/article/10.7567/APEX.9.081002/metahttp://repository.hanyang.ac.kr/handle/20.500.11754/76460
ISSN
1882-0778; 1882-0786
DOI
10.7567/APEX.9.081002
Appears in Collections:
GRADUATE SCHOOL[S](대학원) > BIONANOTECHNOLOGY(바이오나노학과) > Articles
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