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Resistive switching memory based on organic/inorganic hybrid perovskite materials

Title
Resistive switching memory based on organic/inorganic hybrid perovskite materials
Author
김태환
Keywords
Perovskite; Memory; Resistive switching
Issue Date
2016-08
Publisher
PERGAMON-ELSEVIER SCIENCE LTD
Citation
VACUUM, v. 130, Page. 109-112
Abstract
In this work, a resistance switching memory based on organic/inorganic hybrid perovskites (OIHPs) was fabricated. The CH3NH3PbI3 perovskite was grown on polymethyl methacrylate (PMMA) as the resistance switching layer by using a two-step spin-coating procedure. The conduction mechanisms of indium-tin oxide (ITO)/PMMA/CH3NH3PbI3/PMMA/Ag device were investigated in terms of current voltage characteristics. The memory device is reprogrammable and the ON/OFF ratio reaches as high as 10(3). Endurance cycle of the as-fabricated memory device was also carried out. The results indicate the promising electronic application of OIHPs in resistance switching memories. (C) 2016 Elsevier Ltd. All rights reserved.
URI
https://www.sciencedirect.com/science/article/pii/S0042207X16301403?via%3Dihubhttp://repository.hanyang.ac.kr/handle/20.500.11754/76448
ISSN
0042-207X
DOI
10.1016/j.vacuum.2016.05.010
Appears in Collections:
COLLEGE OF ENGINEERING[S](공과대학) > ELECTRONIC ENGINEERING(융합전자공학부) > Articles
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