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Effect of charged additive on SiO2 to poly-Si selectivity in wet ceria based CMP slurry

Title
Effect of charged additive on SiO2 to poly-Si selectivity in wet ceria based CMP slurry
Author
윤석진
Advisor(s)
박재근
Issue Date
2018-08
Publisher
한양대학교
Degree
Master
Abstract
CMP, a chemical mechanical planarization process, is an indispensable process for securing the depth of focus (DOF) for multiple interconnect layers and patterns in semiconductor processes. This study is to increase the selectivity of SiO2 to poly-Si in poly-Si stop CMP during NAND flash memory manufacturing process to reduce dishing and increase DOF margin. Ceria slurry was prepared by adding anionic polymer, nonionic polymer and cationic polymer respectively to polyethylene oxide (PEO) which is a nonionic surfactant in order to conduct CMP experiments. Through this CMP experiment, it was found that the selectivity was significantly increased when the anionic polymer was added, and the FTIR measurements was conducted to analyze the mechanism of the cause. The FTIR spectra analysis confirmed that PEO and anionic polymer form an interpolymer complex, which leads to an increase in the selectivity.
URI
http://dcollection.hanyang.ac.kr/common/orgView/000000106345http://repository.hanyang.ac.kr/handle/20.500.11754/75601
Appears in Collections:
GRADUATE SCHOOL[S](대학원) > NANOSCALE SEMICONDUCTOR ENGINEERING(나노반도체공학과) > Theses (Master)
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