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Chameleonic electrochemical metallization cells: dual-layer solid electrolyte-inducing various switching behaviours

Title
Chameleonic electrochemical metallization cells: dual-layer solid electrolyte-inducing various switching behaviours
Author
정두석
Keywords
ATOMIC SWITCH; MEMORY CELLS; NANOIONICS; SYNAPSES; BIPOLAR; CU
Issue Date
2016-07
Publisher
ROYAL SOC CHEMISTRY
Citation
NANOSCALE (2016), v. 8, no. 34, page. 15621-15628
Abstract
We present 'unusual' resistive switching behaviours in electrochemical metallization (ECM) cells utilizing a dual-layer (SiOx/GeSex: SiOx on GeSex) solid electrolyte (SE). The observed switching behaviour markedly varies with the thickness of the upper SiOx layer and compliance current: (i) monostable switching, (ii) counter-eightwise bipolar switching, and (iii) combination of monostable and eightwise bipolar switching behaviours. Focusing on cases (i) and (iii), electrical and chemical analyses on these chameleonic cells were performed in an attempt to gain clues to the understanding of the observed complexity. The chemical analysis indicated the upper SiOx layer as a chemical potential well for Cu ions-Cu ions were largely confined in the well. This non-uniform distribution of Cu across the SE perhaps hints at the mechanism for the complex behaviour; it may be a 'zero-sum game' between SiOx and GeSex layers, in which the two layers fight over the limited number of Cu atoms/ions.
URI
http://pubs.rsc.org/en/Content/ArticleLanding/2016/NR/C6NR04072A#!divAbstracthttp://repository.hanyang.ac.kr/handle/20.500.11754/74693
ISSN
2040-3364; 2040-3372
DOI
10.1039/c6nr04072a
Appears in Collections:
COLLEGE OF ENGINEERING[S](공과대학) > MATERIALS SCIENCE AND ENGINEERING(신소재공학부) > Articles
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