CdS buffer-layer free highly efficient ZnO-CdSe photoelectrochemical cells

Title
CdS buffer-layer free highly efficient ZnO-CdSe photoelectrochemical cells
Authors
한성환
Issue Date
2012-07
Publisher
American Institute of Physics
Citation
Applied Physics Letters, 2012, 101(3), 033906
Abstract
Highly reproducible, wet-chemically processed, CdS buffer-layer free ZnO-CdSe photoelectrochemical cells with 3.38% power conversion efficiency have been fabricated. An enhanced current density is observed due to increase in number of injected photoelectrons with CdSe nanoparticles loading time. Impedance spectroscopy results suggest that interfacial resistance is strongly dependant on CdSe nanoparticles loading time.
URI
https://aip.scitation.org/doi/10.1063/1.4737865http://repository.hanyang.ac.kr/handle/20.500.11754/73032
ISSN
0003-6951; 1077-3118
DOI
http://dx.doi.org/10.1063/1.4737865
Appears in Collections:
COLLEGE OF NATURAL SCIENCES[S](자연과학대학) > CHEMISTRY(화학과) > Articles
Files in This Item:
There are no files associated with this item.
Export
RIS (EndNote)
XLS (Excel)
XML


qrcode

Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.

BROWSE