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Nanoscale Two-Bit/Cell NAND Silicon-Oxide-Nitride-Oxide-Silicon Memory Device with Different Tunneling Oxide Thicknesses

Title
Nanoscale Two-Bit/Cell NAND Silicon-Oxide-Nitride-Oxide-Silicon Memory Device with Different Tunneling Oxide Thicknesses
Author
김태환
Keywords
NAND SONOS Memory Devices; Tunneling Oxide Thickness; Short Channel Effect; Coupling Interference
Issue Date
2011-07
Publisher
AMER SCIENTIFIC PUBLISHERS, 26650 THE OLD RD, STE 208, VALENCIA, CA 91381-0751 USA
Citation
Journal of nanoscience and nanotechnology,Vol.11 No.7 [2011],6109-6113
Abstract
Nanoscale two-bit/cell NAND-type silicon-oxide-nitride-oxide-silicon (SONOS) flash memory devices with different tunneling oxide thicknesses were designed to reduce the short channel effect and the coupling interference. The process step and the electrical characteristics of the proposed SONOS memory devices were simulated by using SUPREM-4 and MEDICI, respectively. The short channel effect in the nanoscale two-bit/cell SONOS devices was decreased than that of the conventional devices due to a larger effective channel length. The drain current at the on-state of the proposed NAND SONOS memory devices decreased than that of the conventional NAND SONOS devices due to the high channel resistivity. The I-on/I-off ratio of the proposed NAND SONOS memory devices was larger than that of the conventional memory devices due to the dramatic decrease in the subthreshold current of the proposed devices. The electrical characteristics of the NAND SONOS memory devices with different tunneling oxide thicknesses were better than those of the conventional NAND SONOS devices.
URI
http://www.ingentaconnect.com/content/asp/jnn/2011/00000011/00000007/art00092http://repository.hanyang.ac.kr/handle/20.500.11754/72930
ISSN
1533-4880; 1533-4899
DOI
10.1166/jnn.2011.4468
Appears in Collections:
COLLEGE OF ENGINEERING[S](공과대학) > ELECTRONIC ENGINEERING(융합전자공학부) > Articles
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