A Single Element Phase Change Memory

Title
A Single Element Phase Change Memory
Authors
이조원
Keywords
memory; phase change memory; PCM; nonvolatile; GST
Issue Date
2011-05
Publisher
Institute of Electronics, Information and Communication Engineers
Citation
IEICE transactions on electronics,Vol.94 ,No.5 [2011],676-680
Abstract
We report a fast single element nonvolatile memory that employs amorphous to crystalline phase change. Temperature change is induced within a single electronic element in confined geometry transistors to cause the phase change. This novel phase change memory (PCM) operates without the need for charge transport through insulator films for charge storage in a floating gate. GeSbTe (GST) was employed to the phase change material undergoing transition below 200°C. The phase change, causing conductivity and permittivity change of the film, results in the threshold voltage shift observed in transistors and capacitors.
URI
https://www.jstage.jst.go.jp/article/transele/E94.C/5/E94.C_5_676/_articlehttp://repository.hanyang.ac.kr/handle/20.500.11754/72836
ISSN
0916-8524; 1745-1353
DOI
http://dx.doi.org/10.1587/transele.E94.C.676
Appears in Collections:
GRADUATE SCHOOL[S](대학원) > CONVERGENCE NANOSCIENCE(나노융합과학과) > Articles
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