A Single Element Phase Change Memory
- Title
- A Single Element Phase Change Memory
- Author
- 이조원
- Keywords
- memory; phase change memory; PCM; nonvolatile; GST
- Issue Date
- 2011-05
- Publisher
- Institute of Electronics, Information and Communication Engineers
- Citation
- IEICE transactions on electronics,Vol.94 ,No.5 [2011],676-680
- Abstract
- We report a fast single element nonvolatile memory that employs amorphous to crystalline phase change. Temperature change is induced within a single electronic element in confined geometry transistors to cause the phase change. This novel phase change memory (PCM) operates without the need for charge transport through insulator films for charge storage in a floating gate. GeSbTe (GST) was employed to the phase change material undergoing transition below 200°C. The phase change, causing conductivity and permittivity change of the film, results in the threshold voltage shift observed in transistors and capacitors.
- URI
- https://www.jstage.jst.go.jp/article/transele/E94.C/5/E94.C_5_676/_articlehttps://repository.hanyang.ac.kr/handle/20.500.11754/72836
- ISSN
- 0916-8524; 1745-1353
- DOI
- 10.1587/transele.E94.C.676
- Appears in Collections:
- GRADUATE SCHOOL[S](대학원) > CONVERGENCE NANOSCIENCE(나노융합과학과) > Articles
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